DS2016-100+ Maxim Integrated Products, DS2016-100+ Datasheet - Page 3

IC SRAM 16KBIT 100NS 24DIP

DS2016-100+

Manufacturer Part Number
DS2016-100+
Description
IC SRAM 16KBIT 100NS 24DIP
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS2016-100+

Format - Memory
RAM
Memory Type
SRAM
Memory Size
16K (2K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
24-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
AC CHARACTERISTICS READ CYCLE
AC CHARACTERISTICS WRITE CYCLE
DATA RETENTION CHARACTERISTICS
* Typical values are at +25°C
PARAMETER
Read Cycle Time
Access Time
Active
Output High-Z from
Deselection
Output Hold from
Address Change
PARAMETER
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery
Time
Output High-Z from
Output Active from
Data Setup Time
Data Hold Time
PARAMETER
Data Retention Supply
Voltage
Data Retention
Current at 5.5V
Data Retention
Current at 2.0V
Chip Deselect to Data
Retention
Recovery Time
OE
CE
CE
WE
WE
to Output Valid
to Output Valid
or
OE
to Output
SYMBOL
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
t
ACC
COE
t
WC
AW
WR
OD
OH
WP
DH
RC
OE
CO
DS
I
I
V
t
CCR1
CCR2
CDR
t
DR
R
MIN TYP MAX
MIN TYP MAX
100
100
75
10
40
5
5
5
0
5
0
DS2016-100
DS2016-100
CE
CE
CE
CONDITIONS
³ V
³ V
³ V
3 of 8
CC
CC
CC
100
100
50
35
35
- 0.5V
- 0.5V
- 0.5V
(T
(T
A
A
= -40°C to +85°C; V
= -40°C to +85°C; V
MIN TYP
2.0
0
2
0.1*
(T
50*
A
= -40°C to +85°C)
UNITS
UNITS
MAX
CC
750
5.5
CC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
= 5V ±10%)
= 5V ±10%)
NOTES
NOTES
UNITS
µA
nA
ms
µs
V

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