DS2045Y-100# Maxim Integrated Products, DS2045Y-100# Datasheet

IC NVSRAM 1MBIT 100NS 256BGA

DS2045Y-100#

Manufacturer Part Number
DS2045Y-100#
Description
IC NVSRAM 1MBIT 100NS 256BGA
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS2045Y-100#

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DS2045Y-100#
Manufacturer:
DALLAS
Quantity:
8
Company:
Part Number:
DS2045Y-100#
Manufacturer:
Maxim Integrated
Quantity:
10 000
The DS2045 is a 1Mb reflowable nonvolatile (NV) SRAM,
which consists of a static RAM (SRAM), an NV con-
troller, and an internal rechargeable manganese lithium
(ML) battery. These components are encased in a sur-
face-mount module with a 256-ball BGA footprint.
Whenever V
ML battery, powers the SRAM from the external power
source, and allows the contents of the SRAM to be mod-
ified. When V
the controller write-protects the SRAM’s contents and
powers the SRAM from the battery. Two versions of the
DS2045 are available, which provide either a 5% or 10%
power-monitoring trip point. The DS2045 also contains a
power-supply monitor output, RST, which can be used
as a CPU supervisor for a microprocessor.
Rev 4; 10/06
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
RAID Systems and Servers POS Terminals
Industrial Controllers
Gaming
Router/Switches
#Denotes a RoHS-compliant device that may include lead that is exempt under the RoHS requirements.
DS2045AB-70#
DS2045AB-100#
DS2045Y-70#
DS2045Y-100#
PART
CC
CC
is applied to the module, it recharges the
is powered down or out of tolerance,
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
MICROPROCESSOR
TEMP RANGE
General Description
8051
Data-Acquisition Systems
Fire Alarms
PLC
AD0–AD7
P1.0–7
P2.0–7
P4.4
P3.2
P4.0
P3.6
P3.7
Applications
______________________________________________ Maxim Integrated Products
(CE0)
(WR)
(RD)
(INT0)
256 Ball 27mm
256 Ball 27mm
256 Ball 27mm
256 Ball 27mm
DS2045Y/AB Single-Piece 1Mb
PIN-PACKAGE
2
2
2
2
8 BITS
8 BITS
8 BITS
BGA Module
BGA Module
BGA Module
BGA Module
o Single-Piece, Reflowable, 27mm
o Internal ML Battery and Charger
o Unconditionally Write-Protects SRAM when V
o Automatically Switches to Battery Supply when
o Internal Power-Supply Monitor Detects Power Fail
o Reset Output can be used as a CPU Supervisor
o Industrial Temperature Range (-40°C to +85°C)
o UL Recognized
Pin Configuration appears at end of data sheet.
Footprint
is Out-of-Tolerance
V
at 5% or 10% Below Nominal V
for a Microprocessor
CC
Power Failures Occur
SPEED (ns)
Nonvolatile SRAM
100
100
Typical Operating Circuit
70
70
OE
DQ0–7
CE
WE
A0–7
A16
A8–15
RST
Ordering Information
NV SRAM
DS2045
128k x 8
SUPPLY TOLERANCE
CC
2
PBGA Package
(5V)
10
10
5
5
Features
CC
1

Related parts for DS2045Y-100#

DS2045Y-100# Summary of contents

Page 1

... PART TEMP RANGE DS2045AB-70# -40°C to +85°C DS2045AB-100# -40°C to +85°C DS2045Y-70# -40°C to +85°C DS2045Y-100# -40°C to +85°C #Denotes a RoHS-compliant device that may include lead that is exempt under the RoHS requirements. AD0–AD7 8051 MICROPROCESSOR P1.0–7 P2.0–7 For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’ ...

Page 2

... RECOMMENDED OPERATING CONDITIONS (T = -40°C to +85°C) A PARAMETER SYMBOL Supply Voltage Input Logic 1 Input Logic 0 DC ELECTRICAL CHARACTERISTICS ( ±5% for DS2045AB ±10% for DS2045Y PARAMETER SYMBOL Input Leakage Current I/O Leakage Current Output-Current High Output-Current Low Output-Current Low RST ...

Page 3

... AC ELECTRICAL CHARACTERISTICS ( ±5% for DS2045AB ±10% for DS2045Y PARAMETER CE to Output Valid Output Active Output High Impedance from Deselection Output Hold from Address Change Write Cycle Time Write Pulse Width Address Setup Time Write Recovery Time Output High Impedance from WE Output Active from WE ...

Page 4

... DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM ADDRESSES OUT (SEE NOTE 9.) 4 _____________________________________________________________________ ACC COE t COE V OH OUTPUT DATA VALID V OL Read Cycle ...

Page 5

... ADDRESSES OUT D IN (SEE NOTES 10–13.) ADDRESSES OUT D IN (SEE NOTES 10–13.) DS2045Y/AB Single-Piece 1Mb ODW HIGH IMPEDANCE DATA IN STABLE COE ODW DATA IN STABLE V IL _____________________________________________________________________ Nonvolatile SRAM Write Cycle WR1 OEW t DH1 Write Cycle WR2 DH2 ...

Page 6

... DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM ~2. CE, WE BACKUP CURRENT SUPPLIED FROM LITHIUM BATTERY RST (SEE NOTES 1, 7.) Note 1: RST is an open-drain output and cannot source current. An external pullup resistor should be connected to this pin to real- ize a logic-high level. Note 2: These parameters are sampled with a 5pF load and are not 100% tested. ...

Page 7

... CC 0.35 0.30 0.25 0.20 0.15 0.10 0. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 I (mA) OL DS2045Y/AB Single-Piece 1Mb Typical Operating Characteristics SUPPLY CURRENT vs. SUPPLY VOLTAGE 250 T = +25°C A 240 230 220 210 200 190 180 170 160 150 6.0 4.0 4 ...

Page 8

... DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM BALLS NAME A1, A2, A3, A4 GND Ground B1, B2, B3, B4 N.C. No Connection C1, C2, C3, C4 A15 Address Input 15 D1, D2, D3, D4 A16 Address Input 16 RST E1, E2, E3, E4 Open-Drain Reset Output F1, F2, F3 Supply Voltage CC WE G1, G2, G3, G4 Write Enable Input OE H1, H2, H3, H4 ...

Page 9

... BGA assembly techniques. Two versions of the DS2045 are available that provide either a 5% (DS2045AB) or 10% (DS2045Y) power- monitoring trip point. The DS2045 also contains a power-supply monitor output, RST, which can be used as a CPU supervisor for a microprocessor. ...

Page 10

... Data-Retention Mode The DS2045AB provides full functional capability for V greater than 4.75V and write-protects at 4.5V. The CC DS2045Y provides full functional capability for V greater than 4.5V and write-protects at 4.25V. Data is maintained in the absence support circuitry. The NV static RAM constantly moni- tors V ...

Page 11

... DS2045 module. Removal of the topside label violates the environmen- tal integrity of the package and voids the warranty of the product. DS2045Y/AB Single-Piece 1Mb Sn-Pb EUTECTIC To achieve the best results when using the DS2045, ASSEMBLY decouple the power supply with a 0.1µF capacitor. Use a high-quality, ceramic surface-mount capacitor if pos- 3° ...

Page 12

... DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM TOP VIEW GND B N.C. A15 C A16 D RST DQ7 K L DQ6 M DQ5 DQ4 N P DQ3 DQ2 R DQ1 T DQ0 U GND V W GND Y GND Revision History Pages changed at Rev2 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied ...

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