KA5M0965QYDTU Fairchild Semiconductor, KA5M0965QYDTU Datasheet - Page 5

• Manufacturer Part Number: KA5M0965QYDTU
• Description: IC SWIT PWM CM OVP UVLO HV TO3P
• Manufacturer: Fairchild Semiconductor

Specifications of KA5M0965QYDTU

• Frequency Range: 61 ~ 73kHz
• Voltage - Input: 15 ~ 30 V
• Voltage - Output: 650V
• Power (watts): 170W
• Operating Temperature: 25°C ~ 150°C
• Package / Case: TO-3P-5
• Power Switch Family: KA5M0965Q
• Power Switch On Resistance: 960mOhm
• Output Current: 9A
• Number Of Outputs: Single
• Mounting: Through Hole
• Supply Current: 7mA
• Package Type: TO-3P
• Operating Temperature (min): -25C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Commercial
• Pin Count: 5 +Tab
• Power Dissipation: 170W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Characteristics
3000
2500
2000
1500
1000
Figure 5. Capacitance vs. Drain-Source Voltage
500
10
10
10
0
10
1.3
1.2
1.1
1.0
0.9
0.8
-1
1
0
10
-1
Figure 3. On-Resistance vs. Drain Current
-1
0
Top :
Bottom :
Figure 1. Output Characteristics
2
15 V
10 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
V
4
DS
V
DS
, Drain-Source Voltage [V]
10
, Drain-Source Voltage [V]
I
0
D
10
C
6
, Drain Current [A]
C
C
0
V
oss
iss
rss
GS
= 20V
V
8
GS
= 10V
10
C
C
C
iss
oss
rss
= C
= C
= C
10
※
gs
gd
ds
1
1. 250µ s Pulse Test
2. T
+ C
+ C
Note :
10
12
C
gd
1
gd
= 25 ℃
(C
※
1. V
2. f = 1 MHz
ds
Note ;
= shorted)
GS
14
= 0 V
16
Figure 6. Gate Charge vs. Gate-Source Voltage
Figure 4. Source-Drain Diode Forward Voltage
12
10
10
10
10
10
10
10
8
6
4
2
0
0
-1
-1
1
0
1
0
0.0
2
Figure 2. Thansfer Characteristics
5
0.2
25 ℃
10
150 ℃
0.4
150 ℃
4
V
Q
V
SD
GS
G
15
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
0.6
25 ℃
20
V
DS
V
V
DS
= 480V
0.8
DS
-55 ℃
= 300V
6
= 120V
25
1.0
30
※
1. V
2. 250µ s Pulse Test
※
※
Note :
1.2
1. V
2. 250µ s Pulse Test
35
Note
Note : I
GS
8
DS
= 0V
= 50V
D
= 8.5 A
KA5M0965Q
1.4
40
45
1.6
10
5