MCP73114T-0NSI/MF Microchip Technology, MCP73114T-0NSI/MF Datasheet - Page 6

• Manufacturer Part Number: MCP73114T-0NSI/MF
• Description: IC LI-ION/LI-POLY CTRLR 10-DFN
• Manufacturer: Microchip Technology

Specifications of MCP73114T-0NSI/MF

• Battery Type: Lithium-Ion (Li-Ion), Lithium-Polymer (Li-Pol)
• Package / Case: 10-DFN
• Function: Charge Management
• Voltage - Supply: 4 V ~ 16 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Product: Charge Management
• Output Voltage: 4.2 V
• Output Current: 1100 mA
• Operating Supply Voltage: 4.2 V to 6.5 V
• Supply Current: 700 uA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Charge Safety Timers: No
• Mounting Style: SMD/SMT
• Temperature Monitoring: No
• Uvlo Start Threshold: 4.15 V
• Uvlo Stop Threshold: 4.05 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MCP73113/4
DC CHARACTERISTICS (CONTINUED)
DS22183C-page 6
Electrical Specifications: Unless otherwise indicated, all limits apply for V
T
Battery Short Protection
BSP Start Threshold
BSP Hysteresis
BSP Regulation Current
Current Regulation (Fast Charge, Constant-Current Mode)
Fast Charge Current
Regulation
Charge Current Tolerance
Preconditioning Current Regulation (Trickle Charge Constant Current Mode)
Precondition Current Ratio
Precondition Voltage
Threshold Ratio
Precondition Hysteresis
Charge Termination
Charge Termination
Current Ratio
Automatic Recharge
Recharge Voltage
Threshold Ratio
Pass Transistor ON-Resistance
ON-Resistance
Status Indicator - STAT
Sink Current
Low Output Voltage
Input Leakage Current
PROG Input
Charge Impedance Range
Shutdown Impedance
PROG Voltage Range
Automatic Power Down
Automatic Power Down
Entry Threshold
Automatic Power Down
Exit Threshold
Thermal Shutdown
Die Temperature
Die Temperature
Hysteresis
Note 1:
A
= -40°C to +85°C. Typical values are at +25°C, V
Parameters
Not production tested. Ensured by design.
V
V
I
I
TERM
PREG
V
PTH
RTH
V
V
V
T
I
R
R
R
V
PDENTRY
V
BSPHYS
SHORT
I
Sym
SHORT
I
PDEXIT
SDHYS
I
RTOL
V
PROG
PROG
PROG
T
PHYS
DSON
SINK
REG
I
LK
SD
/ V
/ V
OL
/ I
/ I
REG
REG
REG
REG
V
10 mV
3.75
Min
BAT
130
117
900
5.6
7.5
64
69
15
93
70
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8
1
0
DD
+
= [V
REG
150 mV
V
V
50 mV
0.001
1000
66.5
71.5
95.0
(Typical) + 1.0V]
Typ
150
130
100
100
350
200
BAT
BAT
150
1.7
7.5
0.2
25
10
10
10
20
20
10
—
—
—
5
0
+
+
DD
250 mV
V
= [V
1100
1100
Max
6.25
12.5
143
BAT
9.4
0.5
—
—
—
—
15
—
69
74
—
25
97
—
—
35
21
—
—
—
—
1
5
REG
+
(Typical) + 0.3V] to 6V,
Units
mΩ
mV
mA
mA
mA
mA
mV
mA
μA
kΩ
kΩ
°C
°C
%
%
%
%
%
%
%
%
%
%
%
V
V
V
V
V
T
PROG = 10 kΩ
PROG = 1.1 kΩ
PROG = 1 kΩ to 10 kΩ
T
No Preconditioning
V
V
PROG = 1 kΩ to 10 kΩ
T
V
No Automatic Recharge
V
I
High Impedance, V
Impedance for Shutdown
2.3V < V
V
2.3V < V
V
© 2010 Microchip Technology Inc.
SINK
A
A
A
BAT
BAT
BAT
DD
DD
DD
= -5°C to +55°C
= -5°C to +55°C
= -5°C to +55°C
= 4.5V, T
Falling
Rising
Low-to-High
High-to-Low (Note 1)
High-to-Low
= 4 mA
BAT
BAT
Conditions
< V
< V
J
= 105°C (Note 1)
REG
REG
DD
on pin