LTC1734ES6-4.1#TRM Linear Technology, LTC1734ES6-4.1#TRM Datasheet - Page 3
![IC BATT CHRGR LI-ION LIN SOT23-6](/photos/6/57/65736/tsot-23-6_05-08-1636_sml.jpg)
LTC1734ES6-4.1#TRM
Manufacturer Part Number
LTC1734ES6-4.1#TRM
Description
IC BATT CHRGR LI-ION LIN SOT23-6
Manufacturer
Linear Technology
Datasheet
1.LTC1734ES6-4.2TRMPBF.pdf
(12 pages)
Specifications of LTC1734ES6-4.1#TRM
Function
Charge Management
Battery Type
Li-Ion, NiCd, NiMH
Voltage - Supply
4.55 V ~ 8 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
LTC1734ES6-4.1
LTC1734ES6-4.1
LTC1734ES6-4.1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
temperature range, otherwise specifications are at T
otherwise noted. All current into a pin is positive and current out of a pin is negative. All voltages are referenced to GND, unless
otherwise specified.
SYMBOL
Charger Manual Control
V
V
I
Protection
I
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The LTC1734E is guaranteed to meet performance specifications
from 0 C to 70 C ambient temperature range and 0 C to 100 C junction
temperature range. Specifications over the – 40 C to 85 C operating
ambient temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 3: Assumes that the external PNP pass transistor has negligible B-C
reverse-leakage current when the collector is biased at 4.2V (V
base is biased at 5V (V
TYPICAL PERFOR A CE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
PROGPU
DSHRT
MSDT
MSHYS
4.21
4.20
4.19
–50
Float Voltage vs Temperature
and Supply Voltage
I
PNP = FCX589
4.2V OPTION
BAT
–25
PARAMETER
Manual Shutdown Threshold
Manual Shutdown Hysteresis
Programming Pin Pull-Up Current
Drive Output Short-Circuit Current Limit
= 10mA
0
V
TEMPERATURE ( C)
CC
= 4.55V
25
CC
).
50
V
CC
= 8V
75
W
100
1734 G01
U
125
4.201
4.200
4.199
A
Float Voltage vs I
0
CONDITIONS
V
V
V
V
= 25 C. V
BAT
V
T
PNP = FCX589
4.2V OPTION
R
PROG
PROG
PROG
DRIVE
A
CC
PROG
= 25 C
) and the
100
= 5V
The
= 2150
Increasing
Decreasing from V
= 2.5V
= V
200
CC
CC
denotes the specifications which apply over the full operating
= 5V, GND = 0V and V
300
I
BAT
Note 4: Assumes that the external PNP pass transistor has negligible B-E
reverse-leakage current when the emitter is biased at 0V (V
base is biased at 4.2V (V
Note 5: The 4.68V maximum undervoltage lockout (UVLO) exit threshold
must first be exceeded before the minimum V
Short duration drops below the minimum V
microseconds or less are ignored by the UVLO. If manual shutdown is
entered, then V
threshold before manual shutdown can be exited. When operating near the
minimum V
must be used.
(mA)
BAT
400
MSDT
500
CC
600
, a suitable PNP transistor with a low saturation voltage
CC
1734 G02
must be higher than the 4.68V maximum UVLO
700
BAT
BAT
is equal to the float voltage unless
).
210
200
190
–50
I
and Supply Voltage
BAT1
R
PNP = FCX589
PROG
–25
2.05
MIN
vs Temperature
= 7.5k
– 6
35
CC
0
CC
TEMPERATURE ( C)
specification of several
V
specification applies.
CC
2.15
TYP
25
– 3
90
65
= 4.55V AND 8V
LTC1734
50
MAX
2.25
– 1.5
130
CC
75
) and the
100
UNITS
1734 G03
3
mV
mA
125
V
A