NCV3065DR2G ON Semiconductor, NCV3065DR2G Datasheet - Page 10

• Manufacturer Part Number: NCV3065DR2G
• Description: IC LED DRVR HP CONST CURR 8-SOIC
• Manufacturer: ON Semiconductor
• Type: High Power, Constant Currentr

Specifications of NCV3065DR2G

• Constant Current: Yes
• Topology: PWM, SEPIC, Step-Down (Buck), Step-Up (Boost)
• Number Of Outputs: 1
• Internal Driver: Yes
• Type - Primary: Automotive, General Purpose
• Type - Secondary: High Brightness LED (HBLED)
• Frequency: 250kHz
• Voltage - Supply: 3 V ~ 40 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Operating Temperature: -40°C ~ 125°C
• Current - Output / Channel: 1.5A
• Internal Switch(s): Yes
• Input Voltage: 40 V
• Switching Frequency: 100 KHz to 250 KHz
• Operating Temperature Range: - 40 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Efficiency: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NCV3065DR2GOSTR

controller, the design has been optimized for continuous
current operation with low ripple which allows the output
filter capacitor to be eliminated. Figure 20 illustrates the
Value of Components
NOTE: R
Test Results (without output capacitor)
ON/OFF
Name
C1, C4
C2
C3
C5
D1
D2
L1
Q4
Line Regulation
Load Regulation
Output Ripple
Efficiency
+VAUX
ON/OFF
This design illustrates the NCP3065 being used as a PFET
+VIN
GND
J2
J3
J4
J6
J6
1
1
1
1
1
0R10
R1
SENSE
0.1 mF
BC807−LT1G
R11
R11
1206 1206 1206 1206 1206 1206 1206
R2
Test
C4
is used to select LED output current, for 350 mA use 680 mW, for 700 mA use 330 mW and for 1000 mA use 220 mW
Value
100 nF, Ceramic Capacitor, 1206
220 mF, 50 V, Electrolytic Capacitor
1.8 nF, Ceramic Capacitor, 0805
100 pF, Ceramic Capacitor, 0805
1 A, 40 V Schottky Rectifier
MMSD4148
470 mH, DO5022P−474ML Coilcraft Inductor
NTF2955, P−MOSFET, SOT223
R3
6x 1R0 ±1%R
Q1
Figure 17. Buck Demo Board with External Switch Application Schematic
R4
+
220 mF / 50 V
R5
BC817−LT1G
C2
Q2
V
V
V
V
R6
in
in
in
in
= 9 V to 35 V, I
= 12 V, I
= 9 V to 35 V, I
= 12 V, I
R7
10 k
o
o
R9
= 350 mA, V
= 350 mA, V
o
o
= 350 mA
= 350 mA
http://onsemi.com
8
7
6
5
o
OUT
N.C.
COMP
I
V
1 k
PK
= 3 V to 8 V
CC
NCP3065
Condition
R15
SOIC8
= 3 to 8 V
U1
MMBT3904LT1G
R14
NU
R13
NU
10
TCAP
SWC
SWE
GND
efficiency with 1 and 2 LEDs and output currents of 350 mA
and 700 mA. Additional data and design information can be
found of this design in Application Note AND8298.
Name
Q5
R1
R8
R9
R10, R15
R11
R12
U1
1
2
3
4
Q5
CT
Q4
NTF2955
D2
MMSD4148
1.8 nF
C3
Value
MMBT3904LT1G, SOT23
100 mW, 0.5 W
15 k, resistor 0805
10 kW, resistor 0805
1 kW, resistor 0805
1.2 kW, resistor 0805
R
NCP3065, SOIC8
0805
SENSE
15 k
C5
R8
R10
MBRS140LT3G
±1%, 1206
100 pF
1 k
12 mA
13 mA
< 15% I
> 75%
470 mH
D1
R
R12
SENSE
L1
1208
O
±1%
0.1 mF
C1
Results
+
NU
C6
+LED
−LED
GND
J1
J5
J7
1
1
1