ZXLD1370EST16TC Diodes Zetex, ZXLD1370EST16TC Datasheet - Page 21

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ZXLD1370EST16TC

Manufacturer Part Number
ZXLD1370EST16TC
Description
IC LED DRVR HIGH BRIGHT TSSOP-16
Manufacturer
Diodes Zetex
Type
HBLED Driverr
Datasheet

Specifications of ZXLD1370EST16TC

Constant Current
*
Constant Voltage
*
Topology
*
Number Of Outputs
*
Internal Driver
*
Type - Primary
*
Type - Secondary
*
Frequency
*
Voltage - Supply
*
Voltage - Output
*
Mounting Type
Surface Mount
Package / Case
16-TSSOP Exposed Pad, 16-eTSSOP, 16-HTSSOP
Operating Temperature
*
Current - Output / Channel
*
Internal Switch(s)
No
Efficiency
95%
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXLD1370EST16TCTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXLD1370EST16TC
Manufacturer:
MICROCHIP
Quantity:
2 000
Part Number:
ZXLD1370EST16TC
Manufacturer:
DIODES
Quantity:
1 000
Part Number:
ZXLD1370EST16TC
0
Company:
Part Number:
ZXLD1370EST16TC
Quantity:
5 000
Or in case of separate voltage supply, with V
ZXLD1370
Document number: DS32165 Rev. 4 - 2
Applications Information
Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum
frequency allowed in this condition is:
This frequency is within the recommended frequency range the device can handle, therefore the ZXMN6A09K is
recommended to be used with the ZXLD1370 for frequencies from 300kHz to 500kHz).
The recommended total gate charge for the MOSFET used in conjunction with the ZXLD1370 is less than 30nC.
Junction temperature estimation
Finally, the ZXLD1370 junction temperature can be estimated using the following equations:
Total supply current of ZXLD1370:
Power consumed by ZXLD1370
Where the total quiescent current IQ
discharge the gate of the power MOSFET. Moreover the part of thermal resistance between case and ambient depends on
the PCB characteristics.
t
I
Where I
P
P
T
PERIOD
QTOT
J
IC
IC
=
= V
= V
Figure 27. Power derating curve for ZXLD1370 mounted on test board according to JESD51
≈ I
IN
IN
= 20*dt
Q
Q
T
T
• (I
• I
= total quiescent current I
A
A
+ f • Q
Q-IN
+ P
+ P
Q
2.5
1.5
0.5
+ f • Qg)
2
1
0
IC
IC
+ V
-40
G
• θ
• (θ
aux
JA
JC
• (I
=
-25
+ θ
Q-AUX
f = 1/ t
CA)
(Continued)
TOT
-10
+ f • Qg)
PERIOD
consists of the static supply current (IQ) and the current required to charge and
AUX
Q-IN
5
< 15V
+ I
= 515kHz
Q-AUX
Ambient temperature (°C)
20
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© Diodes Incorporated
ZXLD1370
March 2011

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