LM3409HVMYX/NOPB National Semiconductor, LM3409HVMYX/NOPB Datasheet - Page 15

• Manufacturer Part Number: LM3409HVMYX/NOPB
• Description: IC LED DRIVR HIGH BRIGHT 10-MSOP
• Manufacturer: National Semiconductor
• Series: PowerWise®r
• Type: HBLED Driverr

Specifications of LM3409HVMYX/NOPB

• Constant Current: Yes
• Topology: PWM, Step-Down (Buck)
• Number Of Outputs: 1
• Internal Driver: No
• Type - Primary: Automotive
• Type - Secondary: High Brightness LED (HBLED)
• Voltage - Supply: 6 V ~ 75 V
• Mounting Type: Surface Mount
• Package / Case: 10-MSOP Exposed Pad, 10-HMSOP, 10-eMSOP
• Operating Temperature: -40°C ~ 125°C
• Internal Switch(s): Yes
• Efficiency: 97%
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Frequency: -
• Current - Output / Channel: -
• Other names: LM3409HVMYX

EXTERNAL PARALLEL FET PWM DIMMING
Any buck topology LED driver is a good candidate for parallel
FET dimming because high slew rates are achievable, due to
the fact that no output capacitance is required. This allows for
much higher dimming frequencies than are achievable using
the EN pin. When using external parallel FET dimming, a sit-
uation can arise where maximum off-time occurs due to a
shorted output. To mitigate this situation, capacitive coupling
to the enable pin can be employed.
As shown in
from the gate drive signal of the parallel Dim FET to the EN
pin and a pull-up resistor (R
the external V
forces the on-timer to restart corresponding to every rising
edge of the LED voltage, ensuring that the unwanted maxi-
mum off-time condition does not occur. With this type of
dimming, the EN pin does not control the dimming; it simply
resets the controller. A good design choice is to size R
C
EXT
FIGURE 11. External Parallel FET Dimming Circuit
to give a time constant smaller than t
Figure
DD
supply for the Dim FET gate driver. This
11, a small capacitor (C
EXT
FIGURE 10. Ideal LED Current i
) is placed from the EN pin to
OFF
EXT
:
) is connected
30085617
EXT
and
LED
15
(t) During Parallel FET Dimming
The ideal LED current waveform i
PWM dimming is very similar to the EN pin PWM dimming
shown previously. The LED current does not rise and fall in-
finitely fast as shown in
only the speed of the parallel Dim FET ultimately limits the
dimming frequency and dimming duty cycle. This allows for
much faster PWM dimming than can be attained with the EN
pin.
CIRCUIT LAYOUT
The performance of any switching converter depends as
much upon the layout of the PCB as the component selection.
Following a few simple guidelines will maximimize noise re-
jection and minimize the generation of EMI within the circuit.
Discontinuous currents are the most likely to generate EMI,
therefore care should be taken when routing these paths. The
main path for discontinuous current in the LM3409/09HV buck
converter contains the input capacitor (C
diode (D1), the P-channel MosFET (Q1), and the sense re-
sistor (R
and the connections between all three components should be
short and thick to minimize parasitic inductance. In particular,
the switch node (where L1, D1 and Q1 connect) should be
just large enough to connect the components without exces-
sive heating from the current it carries.
The IADJ, COFF, CSN and CSP pins are all high-impedance
control inputs which couple external noise easily, therefore
the loops containing these high impedance nodes should be
minimized. The most sensitive loop contains the sense resis-
tor (R
CSN and CSP pins to maximize noise rejection. The off-time
capacitor (C
GND pins for the same reason. Finally, if an external resistor
(R
to the IADJ and GND pins, also.
In some applications the LED or LED array can be far away
(several inches or more) from the LM3409/09HV, or on a sep-
arate PCB connected by a wiring harness. When an output
capacitor is used and the LED array is large or separated from
the rest of the converter, the output capacitor should be
placed close to the LEDs to reduce the effects of parasitic
inductance on the AC impedance of the capacitor.
EXT
SNS
) is used to bias the IADJ pin, it should be placed close
SNS
) which should be placed as close as possible to the
). This loop should be kept as small as possible
OFF
) should be placed close to the COFF and
Figure 10
however with this method,
LED
30085616
(t) during parallel FET
IN
), the recirculating
www.national.com