TC4469COE Microchip Technology, TC4469COE Datasheet - Page 4

• Manufacturer Part Number: TC4469COE
• Description: IC MOSFET DVR AND/INV 16SOIC
• Manufacturer: Microchip Technology
• Type: Microcontrollerr

Specifications of TC4469COE

• Number Of Outputs: 4
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Configuration: Low-Side
• Input Type: Inverting and Non-Inverting
• Delay Time: 40ns
• Current - Peak: 1.2A
• Number Of Configurations: 4
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Rise Time: 25 ns
• Fall Time: 25 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 4 mA
• Maximum Power Dissipation: 760 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: 0 C
• Number Of Drivers: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TC4467/TC4468/TC4469
ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES)
TRUTH TABLE
DS21425B-page 4
Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5 V
Input
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Continuous Output Current
Latch-Up Protection Withstand
Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Power Supply Voltage
Note
Legend: H = High
Outputs TC446X
Part No.
Inputs A
Inputs B
1:
2:
3:
Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
When driving all four outputs simultaneously in the same direction, V
will cause high-power dissipation in the device.
The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
Parameters
L = Low
H
H
L
TC4467 NAND
H
H
L
Sym
V
V
V
V
I
V
R
I
t
t
I
DC
t
I
PK
t
D1
D2
IN
OH
OL
DD
I
R
F
S
IH
IL
O
H
H
L
V
DD
Min
-10
H
2.4
4.5
– 0.025
L
L
—
—
—
—
—
—
—
—
—
—
—
—
H
H
H
Typ
500
1.2
20
15
15
40
40
—
—
—
—
—
—
—
—
—
TC4468 AND
DD
H
L
L
will be limited to 16 V. This reduces the chance that internal dv/dt
Max
0.30
300
500
100
100
0.8
10
30
50
50
18
—
—
—
—
8
H
L
L
Units
nsec
nsec
nsec
nsec
mA
mA
mA
µA
V
V
V
V
A
V
L
L
L
Note 3
Note 3
0 V
I
I
I
Single Output
Total Package
4.5 V
Figure 4-1
Figure 4-1
Figure 4-1
Figure 4-1
Note 2
LOAD
LOAD
OUT
= 10 mA, V
V
= 100 µA (Note 1)
= 10 mA (Note 1)
IN
V
H
H
L
2002 Microchip Technology Inc.
DD
V
DD
V
TC4469 AND/INV
DD
Conditions
16 V
18 V.
DD
H
H
L
= 18 V
H
L
L
L
L
L