L6571AD013TR STMicroelectronics, L6571AD013TR Datasheet - Page 4
![IC DRVR HALF-BRG W/OSC HV 8-SOIC](/photos/1/38/13851/497-8-soic_sml.jpg)
L6571AD013TR
Manufacturer Part Number
L6571AD013TR
Description
IC DRVR HALF-BRG W/OSC HV 8-SOIC
Manufacturer
STMicroelectronics
Type
High Voltage Half Bridger
Specifications of L6571AD013TR
Configuration
Half Bridge
Input Type
Self Oscillating
Current - Peak
175mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
10 V ~ 16.6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Supply Voltage (min)
10 V
Supply Current
25 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Delay Time
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-3367-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L6571AD013TR
Manufacturer:
ST
Quantity:
20 000
L6571A L6571B
ELECTRICAL CHARACTERISTCS (continued)
OSCILLATOR FREQUENCY
The frequency of the internal oscillator can be programmed using external resistor and capacitor.
The nominal oscillator frequency can be calculated using the following equation:
Where R
The device can be driven in "shut down" condition keeping the C
taken:
1. When C
2. The forced discharge of the oscillator capacitor C
Figure 1.
Figure 2. Waveforms
4/8
Symbol
limit the current discharge with a resistive path imposing R · C
I
DC
f
AVE
out
F
and C
F
Pin
1
6
is to GND the high side driver is off and the low side is on
Duty Cycle, Ratio Between Dead
Time + Conduction Time of High
Side and Low Side Drivers
Average Current from Vs
Oscillation Frequency
F
are the external resistor and capacitor.
Parameter
LVG
V
fault signal
V
CF
S
f
O SC
=
---------------------------------------- -
2 R
T1
F
R
1
C
C
No Load, fs = 60KHz
R
F
F
T
F
T
= 12K; C
C
must not be shorter than 1us: a simple way to do this is to
In2
GNDM
R
Test Condition
F
=
T
----------------------------------------- -
1.3863 R
= 1nF
1
2
3
4
F
F
pin close to GND, but some cares have to be
>1 s (see fig.1)
1
F
C
8
7
6
5
F
Min.
0.45
D96IN434
57
V
SUVP
Typ.
0.5
1.2
60
Max.
0.55
1.5
63
Unit
kHz
mA