ZXGD3101N8TC Diodes Zetex, ZXGD3101N8TC Datasheet - Page 3

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ZXGD3101N8TC

Manufacturer Part Number
ZXGD3101N8TC
Description
SEMICONDUCTOR OTHER
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXGD3101N8TC

Configuration
High or Low Side
Input Type
Non-Inverting
Delay Time
525ns
Current - Peak
4A
Number Of Configurations
2
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
180V
Voltage - Supply
5 V ~ 15 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXGD3101N8TCTR

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Electrical Characteristics
Input and supply characteristics
Operating current
Gate Driver
Turn-off Threshold Voltage(Note 4)
GATE output voltage (Note 4)
GATEH peak source current
GATEL peak sink current
Turn on Propagation delay
Turn off Propagation delay
Gate rise time
Gate fall time
Notes:
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
4. GATEH connected to GATEL
5. R
6. R
7. Refer to Fig 6: test circuit and Fig 7: timing diagram on Page 12
H
L
= 100kΩ, R
= 100kΩ, R
Parameter
H
L
= O/C
= O/C
@T
A
= 25°C, V
Symbol
I
SOURCE
V
V
I
SINK
I
G(off)
V
t
t
OP
G
d1
d2
t
t
r
f
T
CC
= 10V,
V
V
V
V
V
V
V
V
V
V
V
C
DRAIN
DRAIN
G
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
GH
GL
L
www.diodes.com
= 2.2nF, (Notes 6 and 7)
R
= 1V, (Note 5)
= 5V
= 1V
BIAS
≤ -200m V
≥ 0V
≥ 0V, (Note 5)
= -60mV, (Note 6)
= -80mV, (Note 6)
= -100mV, (Note 6)
≤ -200mV, (Note 6)
≤ -140mV, (Note 6)
3 of 14
=1.8kΩ, R
Conditions
SYNCHRONOU S R ECTIFIER CONTROLLER
REF
=3kΩ
Diodes Incorporated
A Product Line of
Min.
-45
5.0
7.0
8.4
9.2
9.3
-
-
-
Typ.
525
305
-16
0.6
7.5
8.5
9.4
9.5
2.5
2.5
15
20
3
8
9
ZXGD3101N8
Max.
0
1
-
-
-
-
-
-
-
-
-
© Diodes Incorporated
June 2010
Unit
mA
mV
ns
ns
ns
ns
V
A
A

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