TC4424EOE713 Microchip Technology, TC4424EOE713 Datasheet - Page 3
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TC4424EOE713
Manufacturer Part Number
TC4424EOE713
Description
IC MOSFET DVR 3A DUAL HS 16-SOIC
Manufacturer
Microchip Technology
Type
Microcontrollerr
Datasheet
1.TC4424CPA.pdf
(18 pages)
Specifications of TC4424EOE713
Configuration
Low-Side
Input Type
Non-Inverting
Delay Time
33ns
Current - Peak
3A
Number Of Configurations
2
Number Of Outputs
2
Voltage - Supply
4.5 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.300", 7.5mm Width)
Rise Time
35 ns
Fall Time
35 ns
Supply Voltage (min)
4.5 V
Supply Current
2.5 mA
Maximum Power Dissipation
470 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC4424EOE713
Manufacturer:
MICROCHIP
Quantity:
12 000
1.0
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B
Package Power Dissipation (T
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
2004 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, T
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Note 1:
DFN ......................................................................... Note 2
PDIP .......................................................................730 mW
SOIC.......................................................................470 mW
................................................ (V
2:
ELECTRICAL
CHARACTERISTICS
Parameters
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
A
70°C)
DD
+ 0.3V) to (GND – 5V)
Sym
V
R
I
V
R
V
V
I
REV
t
t
I
PK
t
t
D1
D2
I
IN
OH
OH
OL
OL
R
F
S
IH
IL
V
DD
Min
2.4
– 0.025
–1
—
—
—
—
—
—
—
—
—
—
—
—
TC4423/TC4424/TC4425
A
>1.5
0.15
Typ
2.8
3.5
1.5
= +25°C, with 4.5V
23
25
33
38
—
—
—
—
—
3
0.025
Max
0.25
0.8
2.5
35
35
75
75
—
—
—
—
1
5
5
Units
mA
µA
ns
ns
ns
ns
V
V
V
V
A
A
V
0V V
I
I
Duty cycle
Figure 4-1, Figure 4-2,
C
Figure 4-1, Figure 4-2,
C
Figure 4-1, Figure 4-2,
C
Figure 4-1, Figure 4-2,
C
V
V
DD
OUT
OUT
IN
IN
L
L
L
L
= 1800 pF
= 1800 pF
= 1800 pF
= 1800 pF
= 3V (Both inputs)
= 0V (Both inputs)
= 10 mA, V
= 10 mA, V
18V.
IN
V
Conditions
DD
2%, t
DD
DD
DS21421D-page 3
= 18V
= 18V
300 µsec.