L6384ED STMicroelectronics, L6384ED Datasheet
L6384ED
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L6384ED Summary of contents
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Features ■ High voltage rail up to 600V ■ dV/dt immunity ±50V/nsec in full temperature range ■ Driver current capability: – 400mA source, – 650mA sink ■ Switching times 50/30 nsec rise/fall with 1nF load ■ CMOS/TTL Schmitt trigger inputs ...
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Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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L6384E 1 Electrical data 1.1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol V Output voltage out V Supply voltage cc I Supply current s V Floating supply voltage boot V High side gate output voltage hvg V Low ...
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Electrical data 1.3 Recommended operating conditions Table 3. Recommended operating conditions Symbol Pin V 6 Output Voltage out ( Floating Supply Voltage BS f Switching Frequency Supply Voltage cc Junction Temperature ...
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L6384E 2 Pin connection Figure 2. Pin connection (Top view) Table 4. Pin description N° Pin DT/SD 4 GND 5 LVG 6 V out 7 HVG 8 Vboot DT/SD ...
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Electrical characteristics 3 Electrical characteristics 3.1 AC operation Table 5. AC operation electrical characteristcs (V Symbol Pin 1 vs High/low side driver turn- 5,7 propagation delay 3 vs Shut down input propagation t onsd 5,7 delay 1 vs ...
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L6384E Table 6. DC operation electrical characteristcs (continued)(V Symbol Pin High/Low side driver I Source short circuit current so 5,7 I Sink short circuit current si Logic inputs Low level logic threshold V il voltage High level logic threshold V ...
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Bootstrap driver 4 Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode integrated structure replaces the external diode realized by a high ...
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L6384E For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the T V has to be taken into account when the voltage drop on C drop ...
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Typical characteristic 5 Typical characteristic Figure 5. Typical rise and fall times vs load capacitance time (nsec) 250 200 150 100 For both high and low side buffers @25˚C Tamb Figure 7. Dead time vs resistance ...
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L6384E Figure 11. Vcc UV turn On vs temperature Typ. Typ -45 -45 -25 -25 Figure 13. Vcc UV turn Off vs temperature ...
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Package mechanical data 6 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...
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L6384E Figure 15. DIP-8 mechanical data and package dimensions mm DIM. MIN. TYP. A 3.32 a1 0.51 B 1.15 b 0.356 b1 0.204 D E 7.95 e 2.54 e3 7. 3.18 Z inch MAX. MIN. ...
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Package mechanical data Figure 16. SO-8 mechanical data and package dimensions mm DIM. MIN. TYP 0.100 A2 1.250 b 0.280 c 0.170 (1) 4.800 4.900 D E 5.800 6.000 (2) 3.800 3.900 E1 e 1.270 h 0.250 L ...
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... L6384E 7 Order codes Table 7. Order codes Part number L6384E L6384ED L6384ED013TR Package DIP-8 SO-8 SO-8 Tape and reel Order codes Packaging Tube Tube 15/17 ...
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Revision history 8 Revision history Table 8. Document revision history Date 12-Oct-2007 16/17 Revision 1 First release L6384E Changes ...
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... L6384E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...