IRS2003SPBF International Rectifier, IRS2003SPBF Datasheet - Page 3

• Manufacturer Part Number: IRS2003SPBF
• Description: IC DRIVER HALF BRIDGE 200V 8SOIC
• Manufacturer: International Rectifier

Specifications of IRS2003SPBF

• Configuration: Half Bridge
• Input Type: Inverting and Non-Inverting
• Delay Time: 680ns
• Current - Peak: 290mA
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 200V
• Voltage - Supply: 10 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Dynamic Electrical Characteristics
V
Static Electrical Characteristics
V
COM. The V
Symbol
Symbol
BIAS
BIAS
V
V
CCUV+
I
I
CCUV-
V
V
QCC
QBS
I
t on
t off
DT
MT
V
I
V
I
I
I
IN+
IN-
O+
LK
O-
t r
t f
OH
OL
IH
IL
(V
(V
CC
CC
, V
, V
O
BS
BS
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Deadtime, LS turn-off to HS turn-on &
HS turn-on to LS turn-off
Delay matching, HS & LS turn-on/off
and I
Logic “1” (HIN) & Logic “0” ( LIN ) input voltage
Logic “0” (HIN) & Logic “1” ( LIN ) input voltage
High level output voltage, V
Low level output voltage, V
Offset supply leakage current
Quiescent V
Quiescent V
Logic “1” input bias current
Logic “0” input bias current
V
threshold
V
threshold
Output high short circuit pulsed current
Output low short circuit pulsed current
CC
CC
) = 15 V, C
) = 15 V and T
supply undervoltage positive going
supply undervoltage negative going
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
BS
CC
L
Definition
Definition
= 1000 pF and T
supply current
supply current
A
= 25 °C unless otherwise specified. The V
O
BIAS
A
- V
= 25 °C unless otherwise specified.
O
Min. Typ. Max. Units Test Conditions
Min. Typ. Max. Units Test Conditions
400
130
270
2.5
7.4
—
—
—
—
—
—
—
—
—
—
—
—
—
8
IN
, V
0.05
0.02
680
150
520
150
290
600
8.9
8.2
70
35
30
—
—
—
—
—
TH,
3
and I
IRS2003(S)PbF
220
820
170
650
270
90
60
0.8
0.2
0.1
9.8
50
55
10
—
—
—
5
9
IN
parameters are referenced to
mA
µA
ns
V
V
HIN = 5 V, LIN = 0 V
HIN = 0 V, LIN = 5 V
V
V
V
V
O
CC
V
O
B
IN
= 15 V, V
PW
PW
V
= 0 V, V
= V
= 10 V to 20 V
V
I
S
O
= 0 V or 5 V
S
= 200 V
= 2 mA
S
= 0 V
10 µs
10 µs
= 200 V
IN
IN
= V
= V
IH
IL
3