IR2214SSPBF International Rectifier, IR2214SSPBF Datasheet - Page 19

• Manufacturer Part Number: IR2214SSPBF
• Description: IC DRIVER HALF BRIDGE SGL 24SSOP
• Manufacturer: International Rectifier

Specifications of IR2214SSPBF

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 440ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 1200V
• Voltage - Supply: 11.5 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 24-SSOP
• Family Hvic: General Purpose HVICs
• Channels: 2
• Topology: Half Bridge
• Application: General Purpose / Motor Control
• Voffset: 1200
• Io+ (ma): 2000
• Io- (ma): 3000
• Separate Power And Logic Ground: Yes
• Uvlo: Vcc / Vbs
• Vbsuv+ / Vccuv+ Min (v): 9.3
• Vbsuv+ / Vccuv+ Typ (v): 10.2
• Vbsuv+ / Vccuv+ Max (v): 11.4
• Vbsuv- / Vccuv- Min (v): 8.7
• Vbsuv- / Vccuv- Typ (v): 9.3
• Vbsuv- / Vccuv- Max (v): 10.3
• Dt / Sdt Min (ns): 5700
• Dt / Sdt Typ (ns): 9250
• Dt / Sdt Max (ns): 13500
• T On Min (ns): 220
• T On Typ (ns): 440
• T On Max (ns): 660
• T Off Min (ns): 220
• T Off Typ (ns): 440
• T Off Max (ns): 660
• Fault Reporting: Yes
• Package: 24 Lead
• Part Status: Active & Preferred
• Special Features: Soft Shutdown and Desaturation Detection
• For Use With: IRMD2214SS - KIT DESIGN EVAL BOARD IR2214SS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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In any case, the worst condition for unwanted turn on is
with very fast steps on the IGBT collector.
In that case, the collector to gate transfer function can
be approximated with the capacitor divider:
R
IRGP30B120K(D)
DRn
IRGP30B120K(D)
IRG4PH30K(D)
IRG4PH30K(D)
=
IGBT
Vcc
IGBT
I
o
−
V
ge
=
V
de
19 nC
10 nC
⋅
Qge
(
19 nC
10 nc
C
Qge
RESoff
IRGP30B120K(D)
C
IRG4PH30K(D)
RESoff
82 nC
20 nC
Qgc
+
IGBT
82 nC
20 nC
C
Qgc
IES
Table 2: dV
Vge*
)
9 V
9 V
Table 1: t
Vge*
9 V
9 V
Table 3: R
400 ns
200 ns
tsw
OUT
Vth(min)
sw
CRESoff
85 pF
14 pF
/dt Driven R
Driven R
4
3
19
0.25 A
0.15 A
Goff
Iavg
Sizing
CRESoff
Gon
which is driven only by IGBT characteristics.
As an example, table 3 reports R
above mentioned disequation) for two popular IGBTs to
withstand dV
NOTICE: The above-described equations are intended
to approximate a way to size the gate resistance. A
more accurate sizing may provide more precise device
and PCB (parasitic) modelling.
14 Ω
85 Ω
85 pF
14 pF
Rtot
Gon
24 Ω
40 Ω
Sizing
Rtot
Sizing
RTOT - RDRp = 6.5
RGon → std commercial value
RTOT - RDRp = 78
RTOT - RDRp = 12.7
RTOT - RDRp = 32.5
RGoff ≤ 35
RGon → std commercial value
RGoff ≤ 4
out
/dt = 5 V/ns .
RGoff
IR2114/IR2214SSPbF
© 2009 International Rectifier
→ 8.2
→ 82
Goff
→ 10
→ 33
(calculated with the
→ 4.5 V/ns
dVout/dt
→ 5 V/ns
→ 420 ns
→ 202 ns
Tsw