SI8235-B-IS Silicon Laboratories Inc, SI8235-B-IS Datasheet - Page 8

• Manufacturer Part Number: SI8235-B-IS
• Description: 4A DUAL LOW SIDE DRIVER
• Manufacturer: Silicon Laboratories Inc
• Type: Low Sider

Specifications of SI8235-B-IS

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 60ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 6.5 V ~ 24 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Rise Time: 20 ns
• Fall Time: 20 ns
• Propagation Delay Time: 50 ns
• Supply Voltage (max): 24 V
• Supply Voltage (min): 10 V
• Supply Current: 11 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Output Current: 4 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q4257169; T0759688

Si823x
Table 1. Electrical Characteristics
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
8
Parameter
Shutdown Time from
Disable True
Restart Time from
Disable False
Device Start-up Time
Common Mode
Transient Immunity
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k.
t
Symbol
RESTART
t
CMTI
START
t
SD
1
(Continued)
VIA, VIB, PWM = VDDI or 0 V
Time from VDD_ = VDD_UV+
to VOA, VOB = VIA, VIB
Rev. 1.1
Test Conditions
Min
20
—
—
—
Typ
—
—
—
45
Max
60
60
40
—
Units
kV/µs
ns
ns
µs