MC33153PG ON Semiconductor, MC33153PG Datasheet - Page 8

• Manufacturer Part Number: MC33153PG
• Description: IC DRIVER GATE SINGLE IGBT 8DIP
• Manufacturer: ON Semiconductor
• Type: Single IGBT Gate Driverr

Specifications of MC33153PG

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 80ns
• Current - Peak: 1A
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 11 V ~ 20 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supply Current: 20 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MC33153PGOS

GATE DRIVE
Controlling Switching Times
is optimization of the switching characteristics. The
switching characteristics are especially important in motor
control applications in which PWM transistors are used in a
bridge configuration. In these applications, the gate drive
circuit components should be selected to optimize turn−on,
turn−off and off−state impedance. A single resistor may be
used to control both turn−on and turn−off as shown in
Figure 31. However, the resistor value selected must be a
compromise in turn−on abruptness and turn−off losses.
Using a single resistor is normally suitable only for very low
frequency PWM. An optimized gate drive output stage is
shown in Figure 32. This circuit allows turn−on and turn−off
to be optimized separately. The turn−on resistor, R
provides control over the IGBT turn−on speed. In motor
control circuits, the resistor sets the turn−on di/dt that
controls how fast the free−wheel diode is cleared. The
interaction of the IGBT and free−wheeling diode determines
The most important design aspect of an IGBT gate drive
8.0
6.0
4.0
2.0
10
0
5.0
Figure 28. Supply Current versus
V
CC
10
Supply Voltage
, SUPPLY VOLTAGE (V)
80
60
40
20
0
Figure 30. Supply Current versus Input Frequency
1.0
15
V
T
A
CC
= 25°C
Output High
Output Low
= 15 V
OPERATING DESCRIPTION
T
A
= 25°C
f, INPUT FREQUENCY (kHz)
http://onsemi.com
10
on
20
,
8
the turn−on dv/dt. Excessive turn−on dv/dt is a common
problem in half−bridge circuits. The turn−off resistor, R
controls the turn−off speed and ensures that the IGBT
remains off under commutation stresses. Turn−off is critical
to obtain low switching losses. While IGBTs exhibit a fixed
minimum loss due to minority carrier recombination, a slow
gate drive will dominate the turn−off losses. This is
particularly true for fast IGBTs. It is also possible to turn−off
an IGBT too fast. Excessive turn−off speed will result in
large overshoot voltages. Normally, the turn−off resistor is
a small fraction of the turn−on resistor.
that is capable of sourcing 1.0 amp and sinking 2.0 amps
peak. This output also contains a pull down resistor to ensure
that the IGBT is off whenever there is insufficient V
MC33153.
configuration. Thus, at least one device is always off. While
The MC33153 contains a bipolar totem pole output stage
In a PWM inverter, IGBTs are used in a half−bridge
8.0
6.0
4.0
2.0
10
-60
0
100
Figure 29. Supply Current versus Temperature
-40
C
-20
L
= 5.0 nF
= 2.0 nF
= 1.0 nF
= 10 nF
T
A
, AMBIENT TEMPERATURE (°C)
0
1000
20
40
60
V
V
Drive Output Open
80
CC
Pin 4
= 15 V
= V
100
CC
CC
120
to the
140
off
,