IX6R11S3 IXYS, IX6R11S3 Datasheet - Page 6

• Manufacturer Part Number: IX6R11S3
• Description: HALF BRIDGE DRIVER 16-SOIC
• Manufacturer: IXYS
• Type: MOSFET/IGBT Half-Bridge Gate Driverr

Specifications of IX6R11S3

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 120ns
• Current - Peak: 6A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 600V
• Voltage - Supply: 10 V ~ 35 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC
• Product: Half-Bridge Drivers
• Rise Time: 35 ns
• Fall Time: 25 ns
• Supply Voltage (min): 10 V
• Maximum Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Output Current: 6 A
• For Use With: EV6R11S3 - BOARD EVALUATION IX6R11S3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q2251412

BATTERY
IXYS reserves the right to change limits, test conditions, and dimensions.
ENB
V1
V
HIN
GND2
LIN
BNC
V
V
DD
CH
CL
1uF/35V MLCC
18V
PULSE
10uF/35V
1
1uF/35V MLCC
U2
Vin
1k
1k
1k
78L15
2
3
2
10uF/35V
HCPL-314J
U3
Vout
½
GND1
1uF/35V MLCC
15V
3
14
VEE
Figure 9. Test circuit for allowable offset supply voltage transient.
10
12
13
14
15
16
17
18
10
11
12
11
VCC
1
GND3
15
16
OUT
VIN+
VOUT-
VOUT+
GND
HIN
ENB
LIN
DG
LS
HS
NC
NC
V
Figure 10. Test circuit for high frequency, 750kHz, operation.
DD
15V
10K
V3
VOUT-
VOUT+
U1
HS
HIN
ENB
LIN
VDD
DG
LS
HGO
2
LGO
V
NC
NC
HS
V
LS
LS
U2
IX6R11
IXDD414
CH
15
14
CL
9
8
7
6
5
3
2
1
4
1,8
4,5
HGO
VCH
LGO
-600V
VCL
6,7
HS
LS
LS
V
1k
DD
C8
0.1uF
, V
CH
, V
C9
10uF
5.1
5.1
IXFP4N100Q
CL
+
C2
10uF
15
Q1
15
= 15V
C6
0.1uF
C5
1N5817
0.1uF
1N5817
GND2
+
10uF
C3
200uH
L1
D2
DSEI12-10A
GND1
GND3
IXTH14N60P
IXTH14N60P
D1
1
Up to 400V
10M90S
18uH
IXCP
2
3
100uF/250V
0.47uF
+
30
GND2
C1
Measure dV/dt (HV Scope Probe)
HV
600V
dVs/dt > 50V/ns
0.47uF
HGO
HS
IX6R11
OUTPUT MONITOR
HV SCOPE PROBE
0.1uF/1kV