MIC5014BN Micrel Inc, MIC5014BN Datasheet - Page 4

IC DRIVER MOSFET HI/LO SIDE 8DIP

MIC5014BN

Manufacturer Part Number
MIC5014BN
Description
IC DRIVER MOSFET HI/LO SIDE 8DIP
Manufacturer
Micrel Inc
Datasheet

Specifications of MIC5014BN

Mounting Type
Through Hole
Configuration
High or Low Side
Input Type
Non-Inverting
Delay Time
2.5ms
Number Of Configurations
1
Number Of Outputs
1
Voltage - Supply
2.75 V ~ 30 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DIP (0.300", 7.62mm)
Device Type
MOSFET
Driver Case Style
DIP
No. Of Pins
8
Rise Time
2.5ms
High Side Mosfet Drive Type
On-Chip Charge Pump
Load Voltage Max
30V
Supply Voltage Min
2.75V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Peak
-
High Side Voltage - Max (bootstrap)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MIC5014BN
Manufacturer:
MIC
Quantity:
5 510
Part Number:
MIC5014BN
Manufacturer:
IR
Quantity:
5 510
Part Number:
MIC5014BN
Manufacturer:
MIC
Quantity:
20 000
MIC5014/5015
Typical Characteristics
MIC5014/5015
1000
0.01
0.01
100
100
100
0.1
0.1
10
10
10
6
5
4
3
2
1
0
1
1
1
0
0
0
0
GATE-TO-SOURCE VOLTAGE (V)
Until Gate = Supply + 10V
5V
High-Side Turn-On Time
Until Gate = Supply + 4V
High-Side Turn-On Time
4
5
5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
(Output Asserted)
3V
Supply Current
Output Current
Charge-Pump
8
10
10
5
C
C
Source connected
to supply: supply
voltage as noted
12 16 20 24 28
GATE
GATE
15
15
= 1300pF
= 1300pF
20
20
10
12V
28V
25
25
30
30
15
All data measured using FET probe to minimize resistive loading
10000
1000
0.01
0.01
100
100
100
0.1
0.1
20
15
10
10
10
10
5
0
1
1
1
0
0
0
0
GATE-TO-SOURCE VOLTAGE (V)
Until Gate = Supply + 10V
High-Side Turn-On Time
Until Gate = Supply + 4V
High-Side Turn-On Time
4
Gate Enhancement
5
5
vs. Supply Voltage
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
3V
Output Current
Source connected
to ground: supply
voltage as noted
Gate Enhancement =
V
Charge-Pump
8
GATE
10
10
5
C
C
5V
12 16 20 24 28
4
GATE
GATE
– V
15
15
SUPPLY
= 3000pF
= 3000pF
20
20
10
12V
25
25
28V
30
30
15
10000
1000
300
250
200
150
100
180
160
140
120
100
100
50
80
60
40
20
10
10
0
0
8
6
4
2
0
1
-60 -30
0
0
0
AMBIENT TEMPERATURE (°C)
High-Side Turn-Off Time
High-Side Turn-On Time
High-Side Turn-On Time
Low-Side Turn-On Time
C
C
1300pF
vs. Gate Capacitance
GATE CAPACITANCE (nF)
GATE
GATE
5
5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
2
vs. Temperature
Until Gate = 1V
Until Gate = 4V
Supply = 12V
C
0
= 1300pF
=
10
10
Supply = 12V
GATE
C
GATE
4
30 60 90 120 150
C
15
GATE
= 1000pF
15
= 3000pF
6
= 3000pF
20
20
8
25
25
Micrel, Inc.
June 2005
10
30
30

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