IR1167ASPBF International Rectifier, IR1167ASPBF Datasheet - Page 13
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IR1167ASPBF
Manufacturer Part Number
IR1167ASPBF
Description
IC MOSFET DRIVER N-CHAN 8-SOIC
Manufacturer
International Rectifier
Series
SmartRectifier™r
Datasheet
1.IR1167ASPBF.pdf
(16 pages)
Specifications of IR1167ASPBF
Configuration
Low-Side
Input Type
Self Oscillating
Delay Time
60ns
Current - Peak
2A
Number Of Configurations
1
Number Of Outputs
1
Voltage - Supply
12 V ~ 18 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Part Status
Active and Preferred
Package
8-Pin SOIC(NB)
Circuit
Switching Regulator Controller
Topology
Flyback / Resonant Half-Bridge
Current Mode
Discontinuous / Critical / Continuous
Vcc (min)
11.4
Vcc (max)
18
Vout (max)
200
Iout (a)
+2 / -7
Switch Freq (khz)
up to 500kHz
Vgate Clamp (v)
10.7
Programmability
MOT / OVT
Enable Pin
Yes
Isleep (ua)
200
Automatic Mot Protection
No
Pbf
PbF Option Available
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Switching Freq, T
www.irf.com
Figures 11-14 shows the maximum allowable V
different loads which are calculated using the design methodology discussed in AN1087.
Fig 13.
Max. Synchronous HEXFET Switching Frequency (kHz)
20
19
18
17
16
15
14
13
12
11
1W HEXFET Gate Resistance included
50
Max. V
100 150 200 250 300 350 400 450 500
J
CC
=125 C, T
Voltage vs. Synchronous Rectifier
IC
= 85 C, external R
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
G
=4W,
CC
voltage vs. maximum switching frequency for
Switching Freq, T
Fig 14.
Maximum Synchronous HEXFET Switching Frequency (kHz)
20
19
18
17
16
15
14
13
12
11
1W HEXFET Gate Resistance included
50
Max V
100 150 200 250 300 350 400 450 500
J
CC
=125 C, T
Voltage vs. Synchronous Rectifier
IR1167AS/BS
IC
= 85 C, external R
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
G
=6W,
13