IR1167BSPBF International Rectifier, IR1167BSPBF Datasheet - Page 12

• Manufacturer Part Number: IR1167BSPBF
• Description: IC MOSFET DRIVER N-CHAN 8-SOIC
• Manufacturer: International Rectifier
• Series: SmartRectifier™r

Specifications of IR1167BSPBF

• Configuration: Low-Side
• Input Type: Self Oscillating
• Delay Time: 60ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 12 V ~ 18 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Part Status: Active and Preferred
• Package: 8-Pin SOIC(NB)
• Circuit: Switching Regulator Controller
• Topology: Flyback / Resonant Half-Bridge
• Current Mode: Discontinuous / Critical / Continuous
• Vcc (min): 11.4
• Vcc (max): 18
• Vout (max): 200
• Iout (a): +2 / -7
• Switch Freq (khz): up to 500kHz
• Vgate Clamp (v): 14.5
• Programmability: MOT / OVT
• Enable Pin: Yes
• Isleep (ua): 200
• Automatic Mot Protection: No
• Pbf: PbF Option Available
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -

Switching Freq, T
Fig 11.
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Max. Synchronous HEXFET Switching Frequency (kHz)
20
19
18
17
16
15
14
13
12
11
4
3
2
1
0
-50
1W HEXFET Gate Resistance included
50
Max. V
100 150 200 250 300 350 400 450 500
J
CC
=125 C, T
Fig 9. MOT vs. Temp.
0
Voltage vs. Synchronous Rectifier
Temperature ( °C )
IC
= 85 C, external R
50
RMOT = 5k
RMOT= 75k
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
100
G
=1W,
150
Switching Freq, T
Fig 12.
Max. Synchronous HEXFET Switching Frequency (kHz)
100
80
60
40
20
20
19
18
17
16
15
14
13
12
11
0
1W HEXFET Gate Resistance included
0
50
Fig 10. Input Bias Current vs. V
Max. V
100 150 200 250 300 350 400 450 500
J
Drain Sense Voltage (V D) (V)
CC
=125 C, T
50
Voltage vs. Synchronous Rectifier
IR1167AS/BS
IC
100
= 85 C, external R
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
T J = -25°C
T J = 25°C
T J = 125°C
150
G
D
=2W,
.
12
200