IXDI414SI IXYS, IXDI414SI Datasheet - Page 3

• Manufacturer Part Number: IXDI414SI
• Description: IC DRIVER MOSF/IGBT 14A 14-SOIC
• Manufacturer: IXYS
• Type: Low Side Gate Driverr

Specifications of IXDI414SI

• Configuration: Low-Side
• Input Type: Inverting
• Delay Time: 30ns
• Current - Peak: 14A
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 4.5 V ~ 35 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Rise Time: 27 ns
• Fall Time: 25 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 3 mA
• Maximum Power Dissipation: 833 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: 1
• Output Current: 14 A
• For Use With: EVDI414 - BOARD EVALUATION IXDI414
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device.
Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The
guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may
affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling
and assembling this component.
Absolute Maximum Ratings
Specifications subject to change without notice
Unless otherwise noted, T
All voltage measurements with respect to GND. Device configured as described in Test Conditions.
Parameter
Supply Voltage
All Other Pins
Power Dissipation
Power Dissipation, T
Storage Temperature
Soldering Lead Temperature (10s)
Tab Temperature (10s)
Symbol
V
V
V
I
V
V
R
R
I
I
t
t
t
t
V
I
(1)
IN
PEAK
DC
R
F
ONDLY
OFFDLY
CC
IH
IL
IN
OH
OL
CC
T
8 Pin PDIP (PI), 14 Pin SOIC
TO220 (CI) TO263 (YI)
OH
OL
CASE
See Figures 3a and 3b
≤25 o C: TO220 (CI), TO263 (YI)*
Parameter
High input voltage
Low input voltage
Input voltage range
Input current
High output voltage
Low output voltage
Output resistance
@ Output high
Output resistance
@ Output Low
Peak output current
Continuous output
current
Rise time
Fall time
On-time propagation
delay
Off-time propagation
delay
Power supply voltage
Power supply current
(1)
(1)
AMBIENT
A
= 25
(1)
(1)
≤25 o C
o
C, 4.5V ≤ V
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
(Note 1)
CC
Value
40V
-0.3V to
V CC + 0.3V
12.5W
833mW
2W
-55 o C to 150 o C
300 o C
260 o C
≤ 35V .
Test Conditions
4.5V ≤ V
4.5V ≤ V
0V ≤ V
I
I
V
8 Pin Dip (PI)
TO220 (CI), TO263 (YI)
C
C
C
C
V
V
V
OUT
OUT
CC
IN
IN
IN
L
L
L
L
=15nF Vcc=18V
=15nF Vcc=18V
=15nF Vcc=18V
=15nF Vcc=18V
= + V
= 3.5V
= 0V
= 10mA, V
= 10mA, V
is 18V
IN
CC
CC
≤ V
CC
≤ 18V
≤ 18V
CC
(Limited by pkg power dissipation)
CC
CC
Parameter
Maximum Junction Temperature
Operating Temperature Range
Thermal Resistance (Junction To Case)
Thermal Resistance (Junction to Ambient)
3
= 18V
= 18V
Operating Ratings
14-Pin SOIC
TO263 (YI), 14 Pin SOIC (SI)
TO220 (CI)
8-Pin PDIP (PI)
TO-220 (CI), TO-263 (YI)
* Subject to internal lead current limit I
V
CC
Min
3.5
-10
- 0.025
4.5
-5
Typ
600
600
14
22
20
30
31
18
1
0
DC
Value
150 o C
-55 o C to 125 o C
150 K/W
120 K/W
V
10 K/W
62.5 K/W
CC
0.025
1000
1000
Max
0.8
10
27
25
33
34
35
10
10
3
4
3
+ 0.3
Units
mΩ
mΩ
mA
µA
µA
µA
ns
ns
ns
ns
V
V
V
V
V
A
A
A
V