IXDI414SI IXYS, IXDI414SI Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXDI414SI
Manufacturer Part Number
IXDI414SI
Description
IC DRIVER MOSF/IGBT 14A 14-SOIC
Manufacturer
IXYS
Type
Low Side Gate Driverr
Datasheet
1.IXDN414SI.pdf
(10 pages)
Specifications of IXDI414SI
Configuration
Low-Side
Input Type
Inverting
Delay Time
30ns
Current - Peak
14A
Number Of Configurations
1
Number Of Outputs
1
Voltage - Supply
4.5 V ~ 35 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Rise Time
27 ns
Fall Time
25 ns
Supply Voltage (min)
4.5 V
Supply Current
3 mA
Maximum Power Dissipation
833 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Drivers
1
Output Current
14 A
For Use With
EVDI414 - BOARD EVALUATION IXDI414
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Electrical Characteristics
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device.
Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The
guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may
affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling
and assembling this component.
Absolute Maximum Ratings
Specifications subject to change without notice
Unless otherwise noted, T
All voltage measurements with respect to GND. Device configured as described in Test Conditions.
Parameter
Supply Voltage
All Other Pins
Power Dissipation
Power Dissipation, T
Storage Temperature
Soldering Lead Temperature (10s)
Tab Temperature (10s)
Symbol
V
V
V
I
V
V
R
R
I
I
t
t
t
t
V
I
(1)
IN
PEAK
DC
R
F
ONDLY
OFFDLY
CC
IH
IL
IN
OH
OL
CC
T
8 Pin PDIP (PI), 14 Pin SOIC
TO220 (CI) TO263 (YI)
OH
OL
CASE
See Figures 3a and 3b
≤25 o C: TO220 (CI), TO263 (YI)*
Parameter
High input voltage
Low input voltage
Input voltage range
Input current
High output voltage
Low output voltage
Output resistance
@ Output high
Output resistance
@ Output Low
Peak output current
Continuous output
current
Rise time
Fall time
On-time propagation
delay
Off-time propagation
delay
Power supply voltage
Power supply current
(1)
(1)
AMBIENT
A
= 25
(1)
(1)
≤25 o C
o
C, 4.5V ≤ V
IXDN414PI / N414CI / N414YI / N414SI
IXDI414PI / I414CI / I414YI / I414SI
(Note 1)
CC
Value
40V
-0.3V to
V CC + 0.3V
12.5W
833mW
2W
-55 o C to 150 o C
300 o C
260 o C
≤ 35V .
Test Conditions
4.5V ≤ V
4.5V ≤ V
0V ≤ V
I
I
V
8 Pin Dip (PI)
TO220 (CI), TO263 (YI)
C
C
C
C
V
V
V
OUT
OUT
CC
IN
IN
IN
L
L
L
L
=15nF Vcc=18V
=15nF Vcc=18V
=15nF Vcc=18V
=15nF Vcc=18V
= + V
= 3.5V
= 0V
= 10mA, V
= 10mA, V
is 18V
IN
CC
CC
≤ V
CC
≤ 18V
≤ 18V
CC
(Limited by pkg power dissipation)
CC
CC
Parameter
Maximum Junction Temperature
Operating Temperature Range
Thermal Resistance (Junction To Case)
Thermal Resistance (Junction to Ambient)
3
= 18V
= 18V
Operating Ratings
14-Pin SOIC
TO263 (YI), 14 Pin SOIC (SI)
TO220 (CI)
8-Pin PDIP (PI)
TO-220 (CI), TO-263 (YI)
* Subject to internal lead current limit I
V
CC
Min
3.5
-10
- 0.025
4.5
-5
Typ
600
600
14
22
20
30
31
18
1
0
DC
Value
150 o C
-55 o C to 125 o C
150 K/W
120 K/W
V
10 K/W
62.5 K/W
CC
0.025
1000
1000
Max
0.8
10
27
25
33
34
35
10
10
3
4
3
+ 0.3
Units
mΩ
mΩ
mA
µA
µA
µA
ns
ns
ns
ns
V
V
V
V
V
A
A
A
V