MC34152D ON Semiconductor, MC34152D Datasheet - Page 8
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MC34152D
Manufacturer Part Number
MC34152D
Description
IC MOSFET DRIVER DUAL HS 8-SOIC
Manufacturer
ON Semiconductor
Type
High Speedr
Datasheet
1.MC34152PG.pdf
(12 pages)
Specifications of MC34152D
Configuration
Low-Side
Input Type
Non-Inverting
Delay Time
55ns
Current - Peak
1.5A
Number Of Configurations
2
Number Of Outputs
2
Voltage - Supply
6.5 V ~ 18 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Rise Time
36 ns
Fall Time
32 ns
Supply Voltage (min)
6.5 V
Supply Current
10.5 mA
Maximum Power Dissipation
560 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
0 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MC34152DOS
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Manufacturer
Quantity
Price
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imperative to prevent excessive output ringing and
overshoot. Do not attempt to construct the driver circuit
on wire−wrap or plug−in prototype boards. When
driving large capacitive loads, the printed circuit board
must contain a low inductance ground plane to minimize
the voltage spikes induced by the high ground ripple
currents. All high current loops should be kept as short as
possible using heavy copper runs to provide a low
impedance high frequency path. For optimum drive
The MC34152 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
High frequency printed circuit layout techniques are
Output Schottky diodes are recommended when driving inductive loads at high
frequencies. The diodes reduce the driver's power dissipation by preventing the
output pins from being driven above V
TL494
TL594
or
Figure 18. Enhanced System Performance with
Figure 20. Direct Transformer Drive
Common Switching Regulators
2
4
3
47
V
CC
6
0.1
5.7V
CC
+
-
and below ground.
5
7
3
1N5819
4 X
LAYOUT CONSIDERATIONS
http://onsemi.com
7
5
V
in
8
Series gate resistor R
caused by the MOSFET input capacitance and any series wiring inductance in the
gate-source circuit. R
D
the output pin from being driven below ground.
performance, it is recommended that the initial circuit
design contains dual power supply bypass capacitors
connected with short leads as close to the V
ground as the layout will permit. Suggested capacitors are
a low inductance 0.1 mF ceramic in parallel with a 4.7 mF
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
critical and cannot be over emphasized.
1
can reduce the driver's power dissipation due to excessive ringing, by preventing
Proper printed circuit board layout is extremely
Figure 19. MOSFET Parasitic Oscillations
3
Figure 21. Isolated MOSFET Drive
g
g
may be needed to damp high frequency parasitic oscillations
will decrease the MOSFET switching speed. Schottky diode
1N5819
5819
1N
D
R
1
Boundary
Isolation
g
V
in
CC
pin and