MC34152DG ON Semiconductor, MC34152DG Datasheet - Page 8

• Manufacturer Part Number: MC34152DG
• Description: IC MOSFET DRIVER DUAL HS 8SOIC
• Manufacturer: ON Semiconductor
• Type: High Speedr

Specifications of MC34152DG

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 55ns
• Current - Peak: 1.5A
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 6.5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 36 ns
• Fall Time: 32 ns
• Supply Voltage (min): 6.5 V
• Supply Current: 10.5 mA
• Maximum Power Dissipation: 560 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: 0 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MC34152DGOS

imperative to prevent excessive output ringing and
overshoot. Do not attempt to construct the driver circuit
on wire−wrap or plug−in prototype boards. When
driving large capacitive loads, the printed circuit board
must contain a low inductance ground plane to minimize
the voltage spikes induced by the high ground ripple
currents. All high current loops should be kept as short as
possible using heavy copper runs to provide a low
impedance high frequency path. For optimum drive
The MC34152 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
High frequency printed circuit layout techniques are
Output Schottky diodes are recommended when driving inductive loads at high
frequencies. The diodes reduce the driver's power dissipation by preventing the
output pins from being driven above V
TL494
TL594
or
Figure 18. Enhanced System Performance with
Figure 20. Direct Transformer Drive
Common Switching Regulators
2
4
3
47
V
CC
6
0.1
5.7V
CC
+
-
and below ground.
5
7
3
1N5819
4 X
LAYOUT CONSIDERATIONS
http://onsemi.com
7
5
V
in
8
Series gate resistor R
caused by the MOSFET input capacitance and any series wiring inductance in the
gate-source circuit. R
D
the output pin from being driven below ground.
performance, it is recommended that the initial circuit
design contains dual power supply bypass capacitors
connected with short leads as close to the V
ground as the layout will permit. Suggested capacitors are
a low inductance 0.1 mF ceramic in parallel with a 4.7 mF
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
critical and cannot be over emphasized.
1
can reduce the driver's power dissipation due to excessive ringing, by preventing
Proper printed circuit board layout is extremely
Figure 19. MOSFET Parasitic Oscillations
3
Figure 21. Isolated MOSFET Drive
g
g
may be needed to damp high frequency parasitic oscillations
will decrease the MOSFET switching speed. Schottky diode
1N5819
5819
1N
D
R
1
Boundary
Isolation
g
V
in
CC
pin and