VNV35N07 STMicroelectronics, VNV35N07 Datasheet - Page 2

MOSFET N-CH 70V 35A POWERSO-10

VNV35N07

Manufacturer Part Number
VNV35N07
Description
MOSFET N-CH 70V 35A POWERSO-10
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet

Specifications of VNV35N07

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
28 mOhm
Current - Peak Output
35A
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Switch Type
Low Side
Power Switch Family
VNV35N07
Input Voltage
18V
Power Switch On Resistance
35mOhm
Output Current
25A
Mounting
Surface Mount
Supply Current
250uA
Package Type
PowerSO
Pin Count
10
Power Dissipation
125W
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Not Compliant
Other names
497-3319-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNV35N07
Manufacturer:
TOSHIBA
Quantity:
2 679
Part Number:
VNV35N07
Manufacturer:
ST
0
Part Number:
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Manufacturer:
ST
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Part Number:
VNV35N0713TR
Manufacturer:
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0
VNP35N07FI-VNB35N07-VNV35N07
ABSOLUTE MAXIMUM RATING
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/13
R
Symbol
R
Symb ol
Symb ol
Symb ol
V
R
t hj-ca se
g
t hj-a mb
V
V
V
V
V
T
P
CLAMP
I
C
V
DS( on)
I
fs
T
IN(th)
I
I
T
CL TH
DSS
I NCL
esd
I SS
DS
st g
D
R
to t
oss
in
c
j
( )
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Drain-source Voltage (V
Input Voltage
Drain Current
Reverse DC O utput Current
Electrostatic Discharge (C= 100 pF , R=1.5 K )
Total Dissipation at T
Operating Junction T emperature
Case Operating T emperature
Storage Temperature
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (V
Supply Current from
Input Pin
Input Threshold
Voltage
Static Drain-source On
Resistance
Forward
Transconductance
Output Capacitance
Parameter
Parameter
Parameter
in
Parameter
= 0)
c
= 25
in
I
I
I
V
V
V
V
V
V
V
V
= 0)
D
D
in
DS
DS
DS
DS
i n
i n
DS
DS
o
= 200 mA
= 2 mA
= -1 mA
C
= 5 V
= 10 V I
= V
= 13 V
= 13 V
= 13 V
= 25 V
= 0 V
case
in
= 25
Test Cond ition s
Test Cond ition s
Test Cond ition s
I
I
V
D
V
D
D
f = 1 MHz
in
V
V
in
+ Ii
I
o
= 18 A
= 18 A
Max
Max
V
D
in
in
C unless otherwise specified)
= 0
= 10 V
in
= 18 A
= 0
= 0
n
= 0
= 1 mA
ISOW ATT 220 Pow erSO -10
3.12
62.5
V
Po werSO-10
in
= 0
D2PAK
125
Internally Clamped
Internally Limited
Internally Limited
Internally Limited
-55 to 150
Min.
Min.
Min.
Value
0.8
60
55
20
2000
-1
-50
50
18
1
ISOW AT T220
Typ .
Typ .
Typ .
250
980
70
25
40
D2PAK
62.5
0.028
0.035
1
Max.
Max.
Max.
1400
-0.3
200
500
80
50
3
o
o
Un it
Un it
Un it
Unit
C/W
C/W
pF
o
o
o
W
V
V
V
V
S
V
V
A
A
V
C
C
C
A
A
A

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