VO3120 Vishay, VO3120 Datasheet - Page 3

• Manufacturer Part Number: VO3120
• Description: IC DRIVER IGBT/MOSFET 2.5A 8-DIP
• Manufacturer: Vishay
• Type: High Side/Low Side Driverr

Specifications of VO3120

• Isolation Voltage: 5300 Vrms
• Input Type: Non-Inverting
• Number Of Outputs: 1
• Current - Output / Channel: 500mA
• Current - Peak Output: 2.5A
• Voltage - Supply: 15 V ~ 32 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Fall Time: 0.1 us
• Logic Gate Type: IGBT
• Rise Time: 0.1 us
• Configuration: 1 Channel
• Output Type: Integrated Photo IC
• Maximum Propagation Delay Time: 0.4 us
• Maximum Forward Diode Voltage: 1.6 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Reverse Diode Voltage: 5 V
• Maximum Forward Diode Current: 25 mA
• Maximum Continuous Output Current: 2.5 A
• Maximum Power Dissipation: 295 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Gate Drive
• Input Current: 16mA
• Output Voltage: 500mV
• Opto Case Style: DIP
• No. Of Pins: 8
• Output Current: 2.5A
• Number Of Elements: 1
• Forward Voltage: 1.6V
• Forward Current: 25mA
• Package Type: PDIP
• Power Dissipation: 295mW
• Propagation Delay Time: 400ns
• Pin Count: 8
• Mounting: Through Hole
• Reverse Breakdown Voltage: 5V
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Lead Free Status / Rohs Status: Compliant

Note
• The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each
Notes
• Minimum and maximum values were tested over recommended operating conditions (T
(1)
(2)
(3)
Document Number: 81314
Rev. 1.3, 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL CHARACTERISTICS
PARAMETER
LED power dissipation
Output power dissipation
Total power dissipation
Maximum LED junction temperature
Maximum output die junction temperature
Thermal resistance, junction emitter to
board
Thermal resistance, junction emitter to case
Thermal resistance, junction detector to
board
Thermal resistance, junction detector to
case
Thermal resistance, junction emitter to
junction detector
Thermal resistance, case to ambient
ELECTRICAL CHARACTERISTICS
PARAMETER
High level output current
Low level output current
High level output voltage
Low level output voltage
High level supply current
Low level supply current
Threshold input current low to high
Threshold input voltage high to low
Input forward voltage
Temperature coefficient of forward voltage
Input reverse breakdown voltage
Input capacitance
UVLO threshold
UVLO hysteresis
resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal
resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation
of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note.
V
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at T
Maximum pulse width = 50 μs, maximum duty cycle = 0.5 %.
Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
I
In this test V
pulse width = 1 ms, maximum duty cycle = 20 %.
O
F(OFF)
peak minimum = 2.5 A.
= - 3 V to 0.8 V, V
OH
is measured with a dc load current. When driving capacitive loads V
amb
= 25 °C and with V
CC
= 15 V to 32 V, V
For technical questions, contact:
CC
EE
2.5 A Output Current IGBT and
Output open, I
This datasheet is subject to change without notice.
SYMBOL
- V
= ground) unless otherwise specified. Typical values are characteristics of the device and are
T
T
P
P





P

EE
jmax.
jmax.
JEC
JDB
JDC
JED
diss
diss
JEB
CA
tot
V
= 32 V.
I
TEST CONDITION
f = 1 MHz, V
O
F
V
V
V
V
O
= - 3 V to + 0.8 V
= 0 mA, V
O
O
I
Output open,
O
I
O
O
= (V
I
I
I
MOSFET Driver
= (V
= (V
I
F
F
F
= (V
= - 100 mA
R
V
= 100 mA
= 10 mA
= 10 mA
= 10 mA
O
= 10 μA
F
VALUE
EE
CC
EE
 5 V
2645
CC
= 7 mA to 16 mA
250
285
125
125
169
192
200
45
82
80
+ 2.5 V)
+ 15 V)
- 15 V)
- 4 V)
O
F
> 5 V
= 0 V
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UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
mW
mW
mW
°C
°C
SYMBOL
UVLO
V
OH
V
V
V
I
I
I
I
V
UVLO +
OH
OH
I
BV
UVLO -
OL
OL
I
I
OH
V
CCH
C
CCL
F
FLH
V
will approach V
FHL
OL
/T
IN
F
(1)
(2)
(1)
(2)
R
(3)
HYS
A
A
= - 40 °C to 110 °C, I
T
19996
V
JD
MIN.
CC
0.5
2.5
0.5
2.5
0.8
9.5
11
Vishay Semiconductors
1
5
θ
- 4
DB
CC
θ
DC
as I
OH
T
TYP.
T
- 1.4
T
B
0.2
1.6
C
60
A
θ
approaches zero A. Maximum
DE
www.vishay.com/doc?91000
T
θ
θ
A
CA
BA
F(ON)
Package
θ
EC
MAX.
13.5
θ
0.5
2.5
2.5
1.6
12
= 7 mA to 16 mA,
EB
5
www.vishay.com
VO3120
T
JE
mV/°C
UNIT
mA
mA
mA
pF
A
A
A
A
V
V
V
V
V
V
V
V
3