VND3NV04-E STMicroelectronics, VND3NV04-E Datasheet - Page 7

MOSFET OMNIFETII 40V 3.5A DPAK

VND3NV04-E

Manufacturer Part Number
VND3NV04-E
Description
MOSFET OMNIFETII 40V 3.5A DPAK
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VND3NV04-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
120 mOhm
Current - Peak Output
5A
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Switch Type
Low Side
Power Switch Family
VND3NV04
Power Switch On Resistance
120mOhm
Output Current
3.5A
Mounting
Surface Mount
Supply Current
100uA
Package Type
DPAK
Pin Count
2 +Tab
Power Dissipation
35W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VND3NV04-E
Manufacturer:
ST
Quantity:
12 000
Part Number:
VND3NV04-E
Manufacturer:
ST
Quantity:
8 000
Part Number:
VND3NV04-E
Manufacturer:
ST
0
Company:
Part Number:
VND3NV04-E
Quantity:
25 000
VNN3NV04, VNS3NV04, VND3NV04, VND3NV04-1
2.2
Table 3.
1. When mounted on a standard single-sided FR4 board with 50 mm
2.3
Table 4.
Off
On
Dynamic (T
Switching (T
Symbol
V
Symbol
R
R
R
R
V
V
V
pins.
g
C
CLAMP
I
DS(on)
thj-case
thj-lead
thj-amb
I
CLTH
DSS
fs
INTH
INCL
ISS
OSS
(1)
j
Drain-source clamp
voltage
Drain-source clamp
threshold voltage
Input threshold voltage
Supply current from input
pin
Input-source clamp
voltage
Zero input voltage drain
current (V
Static drain-source on
resistance
Forward
transconductance
Output capacitance
=25 °C, unless otherwise specified)
Thermal resistance junction-case max
Thermal resistance junction-lead max
Thermal resistance junction-ambient max
j
Thermal data
Thermal data
Electrical characteristics
-40 °C < T
Electrical characteristics
=25 °C, unless otherwise specified)
Parameter
IN
=0 V)
j
< 150 °C, unless otherwise specified.
Parameter
V
V
V
V
I
I
V
V
V
V
V
V
IN
IN
IN
IN
DS
DS
DS
DS
IN
IN
DD
DS
=1 mA
=-1 mA
=0 V; I
=0 V; I
=5 V; I
=5 V; I
=V
=0 V; V
=13 V; V
=25 V; V
=13 V; f=1 MHz; V
=13 V; I
IN
Doc ID 7382 Rev 3
; I
D
D
D
D
D
=1.5 A
=2 mA
=1.5 A; T
=1.5 A
IN
=1 mA
D
IN
IN
Test conditions
=5 V
=1.5 A
=0 V; T
=0 V
j
=25 °C
j
=25 °C
2
IN
SOT-223
of Cu (at least 35 mm thick) connected to all DRAIN
=0 V
70
18
(1)
SO-8
65
15
(1)
Value
Min
-1.0
0.5
40
36
6
Electrical specifications
DPAK
54
3.5
(1)
Typ
100
150
6.8
5.0
45
IPAK
100
3.5
Max
-0.3
150
120
240
2.5
55
30
75
8
°C/W
°C/W
°C/W
Unit
Unit
µA
µA
pF
V
V
V
V
S
7/26

Related parts for VND3NV04-E