VN5E160AS-E STMicroelectronics, VN5E160AS-E Datasheet - Page 24

• Manufacturer Part Number: VN5E160AS-E
• Description: IC DVR SWITCH HI SIDE SGL 8SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN5E160AS-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 160 mOhm
• Current - Peak Output: 10A
• Voltage - Supply: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Application information
3
3.1
3.1.1
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Application information
Figure 32. Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power dissipation in R
Equation 1
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum ON-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
+5V
μC
R
R
produces a shift (I
GND
GND
GND
≤ 600 mV / (I
≥ (−V
is the DC reverse ground pin current and can be found in the absolute
C
ext
CC
R
R
R
prot
prot
) / (-I
prot
GND
GND
S(on)max
S(on)max
(when V
)
R
SENSE
CS
Doc ID 15609 Rev 2
CS_DIS
IN
).
* R
CC
P
GND
D
< 0: during reverse battery situations) is:
= (-V
) in the input thresholds and the status output
CC
)
V
2
GND
/ R
GND
GND
GND
R
GND
GND
S(on)max
only)
V
resistor.
CC
D
GND
becomes the sum of the
OUT
VN5E160AS-E
D
ld