VND10N06-1 STMicroelectronics, VND10N06-1 Datasheet - Page 6

• Manufacturer Part Number: VND10N06-1
• Description: MOSFET POWER 60V 10A IPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET™r
• Type: Low Sider

Specifications of VND10N06-1

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 150 mOhm
• Current - Peak Output: 10A
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -

Electrical specifications
2
2.1
2.2
6/25
Electrical specifications
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 2.
Thermal data
Table 3.
Symbol
V
V
V
T
P
I
I
Symbol
R
ESD
T
R
DSn
I
Dn
Rn
T
INn
stg
in
tot
c
thj-case
j
thj-amb
Drain-Source voltage (V
Input voltage
Input current
Drain current
Reverse DC output current
Electrostatic discharge
(R = 1.5KΩ , C = 100pF)
Total dissipation at T
Operating junction temperature
Case operating temperature
Storage temperature
Absolute maximum ratings
Thermal data
Thermal resistance junction-case
Thermal resistance junction-ambient
Parameter
c
= 25°C
in
= 0V)
Parameter
Internally clamped
Internally clamped
Internally limited
Internally limited
Internally limited
- 55 to 150
Value
4000
± 20
- 15
35
VND10N06 / VND10N06-1
Max. value
100
3.5
°C/W
°C/W
Unit
Unit
mA
°C
°C
°C
W
V
V
A
A
V