VND7N04 STMicroelectronics, VND7N04 Datasheet - Page 7

• Manufacturer Part Number: VND7N04
• Description: MOSFET POWER 42V 7A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND7N04

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Peak Output: 7A
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 42 V
• Continuous Drain Current: 7 A
• Power Dissipation: 60 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: No

VND7N04, VND7N04-1, VNK7N04FM
3
Protection features
During normal operation, the Input pin is electrically connected to the gate of the internal
power MOSFET. The device then behaves like a standard power MOSFET and can be used
as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small
DC current (I
The device integrates:
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit (with a small increase in R
Overvoltage clamp protection: internally set at 42 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
Linear current limiter circuit: limits the drain current Id to Ilim whatever the Input pin
voltage. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
temperatures increase, and if this phase lasts long enough, junction temperature may
reach the overtemperature threshold T
Overtemperature and short circuit protection: these are based on sensing the chip
temperature and are not dependent on the input voltage. The location of the sensing
element on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Overtemperature cutout occurs at minimum 150 °C. The device
is automatically restarted when the chip temperature falls below 135 ° C.
Status feedback: in the case of an overtemperature fault condition, a Status Feedback
is provided through the Input pin. The internal protection circuit disconnects the input
from the gate and connects it instead to ground via an equivalent resistance of 100 .
The failure can be detected by monitoring the voltage at the Input pin, which will be
close to ground potential.
iss
) flows into the Input pin in order to supply the internal circuitry.
jsh
.
Protection features
DS(on)
).
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