VN5E050MJTR-E STMicroelectronics, VN5E050MJTR-E Datasheet - Page 17

• Manufacturer Part Number: VN5E050MJTR-E
• Description: IC DVR SWITCH HI SIDE PWRSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN5E050MJTR-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 50 mOhm
• Current - Peak Output: 27A
• Voltage - Supply: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VN5E050MJ-E
Table 11.
1. The above test levels must be considered referred to V
2. Valid in case of external load dump clamp: 40 V maximum referred to ground.
Table 12.
1. The above test levels must be considered referred to V
2. Valid in case of external load dump clamp: 40 V maximum referred to ground.
Table 13.
ISO 7637-2:
Test pulse
ISO 7637-2:
Test pulse
2004(E)
2004(E)
Class
5b
5b
2a
3a
3b
1
4
2a
3a
3b
C
E
1
4
(2)
(2)
Electrical transient requirements (part 1)
Electrical transient requirements (part 2)
Electrical transient requirements (part 3)
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
-100V
+37V
+75V
+65V
-75V
-6V
III
Test levels
+100V
-100V
-150V
Doc ID 16611 Rev 1
(1)
+50V
+87V
-7V
IV
III
C
C
C
C
C
C
5000 pulses
5000 pulses
Number of
test times
pulses or
1 pulse
1 pulse
Test level results
1h
1h
CC
CC
Contents
= 13.5 V except for pulse 5b
= 13.5 V except for pulse 5b.
90ms
90ms
Burst cycle/pulse
Min.
0.5s
0.2s
repetition time
(1)
Electrical specifications
100ms
100ms
Max.
5s
5s
IV
C
C
C
C
C
C
100ms, 0.01Ω
Delays and
Impedance
0.1µs, 50Ω
0.1µs, 50Ω
400ms, 2Ω
2 ms, 10Ω
50µs, 2Ω
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