VNP10N07-E STMicroelectronics, VNP10N07-E Datasheet - Page 3

• Manufacturer Part Number: VNP10N07-E
• Description: MOSFET OMNIFET 70V 10A TO-220
• Manufacturer: STMicroelectronics
• Series: OMNIFET™r
• Type: Low Sider

Specifications of VNP10N07-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 100 mOhm
• Current - Peak Output: 10A
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• On Resistance (max): 100 mOhms
• Maximum Power Dissipation: 50 W
• Mounting Style: Through Hole
• Supply Current: 0.25 mA
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ( )
SOURCE DRAIN DIODE
PROTECTION
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Parameters guaranteed by design/characterization
I
t
Symbol
Symbol
Symbol
T
(di/dt)
T
E
Q
RRM
V
dlim
I
t
jsh
gf
rr
jrs
t
t
t
t
as
SD
rr
d(off)
d(off)
d(on)
d(on)
I
Q
lim
t
t
t
t
(
(
(
r
f
r
f
(
(
(
(
i
(
( )
on
)
)
)
)
)
)
)
)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Drain Current Limit
Step Response
Current Limit
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
Parameter
Parameter
Parameter
V
V
(see figure 3)
V
V
(see figure 3)
V
V
V
I
I
V
(see test circuit, figure 5)
V
V
V
V
V
V
starting T
V
SD
SD
DD
gen
DD
gen
DD
in
DD
DD
in
in
in
in
in
in
in
= 5 A
= 10 V
= 5 A
= 10 V
= 5 V
= 10 V
= 5 V
= 10 V
= 5 V
= 10 V R
= 15 V
= 15 V
= 15 V
= 12 V
= 30 V
= 10 V
= 10 V
j
Test Conditions
Test Conditions
Test Conditions
= 25
V
di/dt = 100 A/ s
V
V
V
V
in
gen
I
DS
DS
D
T
DS
DS
R
I
= 0
D
j
o
R
R
= 5 A
I
I
gen
C
= 25
d
d
= 13 V
= 13 V
= 1 K
= 13 V
= 13 V
= 5 A
gen
gen
= 5 A
= 5 A
= 10
= 10
= 1000
V
o
C
DD
V
in
= 20 V
L = 10 mH
= 10 V
Min.
Min.
Min.
150
135
0.4
7
7
Typ.
Typ.
Typ.
230
100
600
125
0.9
3.8
1.7
0.3
4.8
50
80
60
30
10
10
20
50
50
20
Max.
Max.
Max.
100
160
400
180
900
2.5
1.6
14
14
30
80
2
6
VNP10N07
Unit
A/ s
Unit
Unit
mA
mA
nC
ns
ns
ns
ns
ns
ns
o
o
V
A
A
A
J
C
C
C
s
s
s
s
s
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