VND5160JTR-65-E STMicroelectronics, VND5160JTR-65-E Datasheet - Page 16

• Manufacturer Part Number: VND5160JTR-65-E
• Description: IC DRVR HISIDE 2CH POWERSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND5160JTR-65-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 160 mOhm
• Current - Peak Output: 5A
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSSO-12
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical specifications
16/31
Table 12.
1. The above test levels must be considered referred to V
2. Valid in case of external load dump clamp: 40V maximum referred to ground.
ISO 7637-2:
ISO 7637-2:
Test pulse
Test pulse
2004(E)
2004(E)
Class
5b
5b
2a
3a
3b
2a
3a
3b
C
1
4
1
4
E
(2)
(2)
Electrical transient requirements
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
-100V
+37V
+75V
+65V
-75V
-6V
III
Test levels
+100V
-100V
-150V
+50V
+87V
(1)
-7V
III
C
C
C
C
C
C
IV
Number of
test times
pulses or
1 pulse
1 pulse
pulses
pulses
Test level results
5000
5000
1h
1h
CC
Contents
= 13.5V except for pulse 5b.
90 ms
90 ms
0.5 s
0.2 s
Burst cycle/pulse
repetition time
(1)
100 ms
100 ms
5 s
5 s
IV
C
C
C
C
C
C
VND5160AJ-E
100 ms, 0.01
Delays and
0.1 µs, 50 Ω
0.1 µs, 50 Ω
400 ms, 2 Ω
impedance
2 ms, 10 Ω
50 µs, 2 Ω
Ω