VND5160J-65-E STMicroelectronics, VND5160J-65-E Datasheet - Page 22

• Manufacturer Part Number: VND5160J-65-E
• Description: IC DRVR HISIDE 2CH POWERSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND5160J-65-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 160 mOhm
• Current - Peak Output: 5A
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSSO-12
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Application information
3.1.2
3.2
3.3
22/31
Solution 2 : diode (D
A resistor (R
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈ 600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
Load dump protection
D
V
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
MCU I/Os protection
If a ground protection network is used and negative transient are present on the V
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the MCU I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of MCU and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of MCU
I/Os.
-V
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
CC
ld
CCpeak
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
max DC rating. The same applies if the device is subject to transients on the V
CCpeak
prot
/I
latchup
≤ 180kΩ .
= - 100V and I
GND
=1kΩ) should be inserted in parallel to D
≤ R
prot
≤ (V
prot
OHµC
latchup
GND
=10kΩ, C
-V
) in the ground line
≥ 20mA; V
IH
-V
GND
EXT
) / I
=10nF
OHµC
IHmax
.
≥ 4.5V
GND
if the device drives an
prot
VND5160AJ-E
) in line to
CC
CC
line,
line