VND5160J-E STMicroelectronics, VND5160J-E Datasheet - Page 20

• Manufacturer Part Number: VND5160J-E
• Description: IC DRVR HISIDE 2CH POWERSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND5160J-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 160 mOhm
• Current - Peak Output: 5A
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSSO-12
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Application information
3
Note:
3.1
3.1.1
20/31
Application information
Figure 28. Application schematic
Channels 2, has the same internal circuit as channel 1.
GND protection network against reverse battery
Solution 1 : resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power Dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
D
GND
= (-V
R
R
will produce a shift (I
GND
GND
CC
GND
+5V
µC
)
≤ 600mV / (I
≥ (− V
2
/R
is the DC reverse ground pin current and can be found in the absolute
GND
CC
R
R
R
) / (-I
prot
prot
prot
S(on)max
GND
GND
+5V
S(on)max
)
(when V
STATUS
).
STAT_DIS
INPUT
* R
CC
GND
<0: during reverse battery situations) is:
GND
.
) in the input thresholds and the status output
V
GND
R
GND
GND
GND
GND
S(on)max
V
only)
CC
resistor.
D
GND
OUTPUT
becomes the sum of the
VND5160J-E
D
ld