VN02N-E STMicroelectronics, VN02N-E Datasheet - Page 6

• Manufacturer Part Number: VN02N-E
• Description: IC SSR HI SIDE 60V PENTAWATT VRT
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN02N-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 400 mOhm
• Current - Peak Output: 6A
• Voltage - Supply: 7 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads)
• Current, Output: 6 A @ 25 °C
• Delay, Propagation, Turn-off: 10 uA (Typ.) @ 3 A, 25
• Delay, Propagation, Turn-on: 10 uA (Typ.) @ 3 A, 25 °C
• Package Type: PENTAWATT Vertical
• Power Dissipation: 29 W
• Temperature, Ambient, Minimum: -55 °C
• Temperature, Junction, Maximum: 10 uA (Typ.) @ 3 A, 25
• Temperature, Range, Operating Ambient: -55 °C
• Temperature, Storage: 10 uA (Typ.) @ 3 A, 25
• Thermal Resistance, Junction To Ambient: 60 °C⁄W
• Time, Fall, Turn-off: 10 uA (Typ.) @ 3 A, 25
• Time, Rise, Turn-on: 15 uA (Typ.) @ 3 A, 25 °C
• Transistor Type: Integrated Power MOS
• Voltage, Supply: 26 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Electrical specifications
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Electrical specifications
Figure 3.
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics sure
program and other relevant quality document.
Table 2.
V
Symbol
(BR)DSS
V
-V
I
I
Tstg
STAT
P
OUT
I
ESD
I
T
IN
R
CC
tot
j
Drain-Source breakdown voltage
Output current (cont.)
Reverse output current
Input current
Reverse supply voltage
Status current
Electrostatic discharge (1.5 kΩ , 100 pF)
Power dissipation at T
Junction operating temperature
Storage temperature
Current and voltage conventions
Absolute maximum ratings
V
IN
I
IN
V
I
STAT
STAT
STATUS
INPUT
Parameter
c
≤ 25 °C
GND
V
CC
I
GND
OUTPUT
V
F
I
OUT
-40 to 150
-55 to 150
Value
2000
±10
±10
V
60
29
-6
-4
6
OUT
I
CC
V
CC
VN02N
Unit
mA
mA
°C
°C
W
A
V
V
A
V