VND810 STMicroelectronics, VND810 Datasheet - Page 19

IC DRVR HISIDE 2CH 16-SOIC

VND810

Manufacturer Part Number
VND810
Description
IC DRVR HISIDE 2CH 16-SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VND810

Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
160 mOhm
Current - Peak Output
5A
Voltage - Supply
5.5 V ~ 36 V
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Current - Output / Channel
-

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3.5
Note:
VND810
Maximum demagnetization energy (V
Figure 26. Maximum turn-off current versus load inductance
Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves B and C.
V
I
IN
C= repetitive pulse at T
LM A X (A )
B= repetitive pulse at T
A = single pulse at T
, I
L
10
1
0,1
Demagnetization
Jstart
Jstart
Jstart
L
= 150ºC
jstart
= 0Ω.
= 125ºC
= 100ºC
(at beginning of each demagnetization) of every pulse
1
L(mH)
Demagnetization
CC
10
= 13.5V)
C
B
Application information
A
Demagnetization
100
19/27
t

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