VND5050J-E STMicroelectronics, VND5050J-E Datasheet - Page 23

• Manufacturer Part Number: VND5050J-E
• Description: IC DRVR HISIDE 2CH POWERSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND5050J-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 50 mOhm
• Current - Peak Output: 18A
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSSO-12
• Supply Voltage (min): 4.5 V
• Supply Current: 6 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 40000 ns
• Maximum Turn-on Delay Time: 20000 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VND5050J-E / VND5050K-E
3.5
Note:
Maximum demagnetization energy (V
Figure 30. Maximum turn-off current versus inductance (for each channel)
Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves A and B.
100
10
1
V
IN
0,1
A: T
B: T
C: T
, I
L
jstart
jstart
jstart
= 150°C single pulse
= 100°C repetitive pulse
= 125°C repetitive pulse
C
A
B
Demagnetization
L
=0 Ω.In case of repetitive pulses, T
Doc ID 12266 Rev 6
1
L (mH)
Demagnetization
CC
10
= 13.5V)
jstart
Application information
(at beginning of each
Demagnetization
100
23/37
t