VND830ETR-E STMicroelectronics, VND830ETR-E Datasheet
VND830ETR-E
Specifications of VND830ETR-E
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VND830ETR-E Summary of contents
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... Thermal shutdown with automatic restart allows the device to recover normal operation as soon as fault condition disappears. Tube VND830E-E Doc ID 17461 Rev 1 VND830E-E pin voltage clamp protects the device CC Order codes Tape and reel VND830ETR 1/26 www.st.com 1 ...
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VND830E-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical ...
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List of tables List of tables Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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VND830E-E List of figures Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Block diagram and pin description 1 Block diagram and pin description Figure 1. Block diagram GND INPUT1 STATUS1 OVERTEMP. 1 INPUT2 STATUS2 OVERTEMP. 2 Figure 2. Configuration diagram (top view) Table 2. Suggested connections for unused and not connected pins ...
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... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document. Table 3. ...
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Electrical specifications 2.2 Thermal data Table 4. Thermal data (per island) Symbol R Thermal resistance junction-lead thj-lead R Thermal resistance junction-ambient thj-amb 1. When mounted on a standard single-sided FR-4 board with 0.5 cm Horizontal mounting and no artificial air ...
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VND830E-E Table 5. Power outputs (continued) Symbol I Supply current S I Off-state output current L(off1) I Off-state output current L(off2) I Off-state output current L(off3) I Off-state output current L(off4) Table 6. Switching (V Symbol t Turn-on delay time ...
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Electrical specifications Table Symbol V Forward on voltage F Table 9. Status pin Symbol V Status low output voltage STAT I Status leakage current LSTAT C Status pin Input capacitance STAT V Status clamp voltage SCL Table ...
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VND830E-E Figure 4. Status timings OPEN- LOAD STATUS TIMING (with external pull-up) V INn V STATn t DOL(off) Figure 5. Switching time waveforms Table 12. Truth table Conditions Normal operation Current limitation Overtemperature Undervoltage I < > V ...
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Electrical specifications Table 12. Truth table (continued) Conditions Overvoltage Output voltage > V Output current < I Table 13. Electrical transient requirements on V ISO T/R 7637/1 test pulse Table 14. Electrical transient requirements ...
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VND830E-E Figure 6. Waveforms INPUT n OUTPUT VOLTAGE STATUS INPUT n OUTPUT VOLTAGE STATUS V CC INPUT n OUTPUT VOLTAGE STATUS n INPUT n OUTPUT VOLTAGE STATUS n INPUT n OUTPUT VOLTAGE STATUS INPUT ...
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Electrical specifications 2.4 Electrical characteristics curves Figure 7. Off-state output current IL(off1) (µA) 0.9 0.8 Off state 0.7 Vcc=13V Vin=Vout=0V 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 - 100 Tc (°C) Figure 9. Input clamp ...
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VND830E-E Figure 13. On-state resistance vs T Ron (mOhm) 160 140 Iout=2A Vcc=8V; 13V & 36V 120 100 -50 - (°C) Figure 15. Open-load on-state detection threshold Iol (mA) 150 ...
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Electrical specifications Figure 19. Input hysteresis voltage Vhyst (V) 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 - (°C) Figure 21. Turn-on voltage slope dVout/dt(on) (Vms) 800 700 Vcc=13V Rl=6.5Ohm 600 500 400 ...
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VND830E-E 3 Application information Figure 25. Application schematic +5V R prot μC R prot R prot R prot 3.1 GND protection network against reverse battery This section provides two solutions for implementing a ground protection network against reverse battery. 3.1.1 ...
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Application information Please note that, if the microprocessor ground is not common with the device ground, then the R produces a shift (I GND values. This shift varies depending on how many devices are ON in the case of several ...
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VND830E-E 3.4 Open-load detection in off-state Off-state open-load detection requires an external pull-up resistor (R OUTPUT pin and a positive supply voltage (V microprocessor. The external resistor has to be selected according to the following requirements false open-load ...
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Application information 3.5 Maximum demagnetization energy Figure 27. Maximum turn-off current versus load inductance (A) 100 single pulse repetitive pulse repetitive pulse at T Conditions: V ...
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VND830E-E 4 Package and PCB thermal data 4.1 SO-16L thermal data Figure 28. SO-16L PC board 1. Layout condition thickness = 35 µm, Copper areas: 0.5 cm Figure 29. R thj-amb RTH j-amb (°C/ ...
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Package and PCB thermal data Figure 30. SO-16 L thermal impedance junction ambient single pulse Equation 1 pulse calculation formula : ⋅ δ THδ TH δ T ⁄ where p Figure 31. Thermal fitting ...
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VND830E-E Table 16. Thermal parameters Area/ island ( (°C/W) R2 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1 (W.s/°C) C2 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/°C) Doc ID 17461 Rev 1 Package ...
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Package and packing information 5 Package and packing information ® 5.1 ECOPACK In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions ...
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VND830E-E Table 17. SO-16L mechanical data DIM Package and packing information mm. Min. Typ. 0.1 0.35 0.23 0.5 45° (typ.) 10.1 10.0 1.27 8.89 7.4 ...
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Revision history 6 Revision history Table 18. Document revision history Date 03-May-2010 25/27 Revision 1 Initial release. Doc ID 17461 Rev 1 VND830E-E Changes ...
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... VND830E-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...