VN920SP STMicroelectronics, VN920SP Datasheet - Page 17

• Manufacturer Part Number: VN920SP
• Description: IC SSR HIGHSIDE 1CH POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN920SP

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 15 mOhm
• Current - Output / Channel: 45A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Peak Output: -

VN920SP
3.1.2
3.2
3.3
Solution 2: diode (D
A resistor (R
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift ( 600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
Series resistor in INPUT and STATUS lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.
Load dump protection
D
V
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
MCU I/Os protection
If a ground protection network is used and negative transient are present on the V
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of C and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C
I/Os.
-V
Calculation example:
For V
5k
Recommended values: R
CC
ld
CCpeak
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
max DC rating. The same applies if the device is subject to transients on the V
CCpeak
R
prot
/I
latchup
65k .
= - 100V and I
GND
= 1k
R
prot
(V
should be inserted in parallel to D
prot
GND
OH
latchup
µ
=10k .
C
) in the ground line
-V
IH
20mA; V
-V
GND
) / I
OH
IHmax
µ
C
4.5V
GND
if the device drives an
Application information
prot
) in line to
CC
CC
line,
line
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