VND830MSP STMicroelectronics, VND830MSP Datasheet - Page 19

• Manufacturer Part Number: VND830MSP
• Description: IC DRVR HISIDE 2CH POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND830MSP

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 60 mOhm
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Supply Voltage (min): 5.5 V
• Supply Current: 40 mA
• Maximum Power Dissipation: 73500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VND830MSP
3.5
Maximum demagnetization energy (V
Figure 26. Maximum turn-off current versus load inductance
V
I
Note:
Values are generated with R
In case of repetitive pulses, T
specified above for curves B and C.
IN
C= repetitive pulse at T
LM AX (A)
B= repetitive pulse at T
A = single pulse at T
, I
L
100
10
1
0,1
L
jstart
= 0
Demagnetization
Jstart
(at beginning of each demagnetization) of every pulse must not exceed the temperature
Jstart
Jstart
= 150 °C
Doc ID 7379 Rev 4
= 125 °C
= 100 °C
1
L(mH)
Demagnetization
CC
C
= 13.5 V)
10
B
Application information
A
Demagnetization
100
19/27
t