VNB35N07TR-E STMicroelectronics, VNB35N07TR-E Datasheet - Page 2
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VNB35N07TR-E
Manufacturer Part Number
VNB35N07TR-E
Description
MOSFET OMNIFET 70V 35A D2PAK
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet
1.VNV35N07.pdf
(13 pages)
Specifications of VNB35N07TR-E
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
28 mOhm
Current - Peak Output
35A
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Switch Type
Low Side
Power Switch Family
VNB35N07
Input Voltage
18V
Power Switch On Resistance
35mOhm
Output Current
25A
Mounting
Surface Mount
Supply Current
250uA
Package Type
D2PAK
Pin Count
2 +Tab
Power Dissipation
125W
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VNB35N07TR-E
Manufacturer:
ST
Quantity:
15 600
Part Number:
VNB35N07TR-E
Manufacturer:
ST
Quantity:
20 000
VNP35N07FI-VNB35N07-VNV35N07
ABSOLUTE MAXIMUM RATING
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/13
R
Symbol
R
Symb ol
Symb ol
Symb ol
V
R
t hj-ca se
g
t hj-a mb
V
V
V
V
V
T
P
CLAMP
I
C
V
DS( on)
I
fs
T
IN(th)
I
I
T
CL TH
DSS
I NCL
esd
I SS
DS
st g
D
R
to t
oss
in
c
j
( )
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Drain-source Voltage (V
Input Voltage
Drain Current
Reverse DC O utput Current
Electrostatic Discharge (C= 100 pF , R=1.5 K )
Total Dissipation at T
Operating Junction T emperature
Case Operating T emperature
Storage Temperature
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (V
Supply Current from
Input Pin
Input Threshold
Voltage
Static Drain-source On
Resistance
Forward
Transconductance
Output Capacitance
Parameter
Parameter
Parameter
in
Parameter
= 0)
c
= 25
in
I
I
I
V
V
V
V
V
V
V
V
= 0)
D
D
in
DS
DS
DS
DS
i n
i n
DS
DS
o
= 200 mA
= 2 mA
= -1 mA
C
= 5 V
= 10 V I
= V
= 13 V
= 13 V
= 13 V
= 25 V
= 0 V
case
in
= 25
Test Cond ition s
Test Cond ition s
Test Cond ition s
I
I
V
D
V
D
D
f = 1 MHz
in
V
V
in
+ Ii
I
o
= 18 A
= 18 A
Max
Max
V
D
in
in
C unless otherwise specified)
= 0
= 10 V
in
= 18 A
= 0
= 0
n
= 0
= 1 mA
ISOW ATT 220 Pow erSO -10
3.12
62.5
V
Po werSO-10
in
= 0
D2PAK
125
Internally Clamped
Internally Limited
Internally Limited
Internally Limited
-55 to 150
Min.
Min.
Min.
Value
0.8
60
55
20
2000
-1
-50
50
18
1
ISOW AT T220
Typ .
Typ .
Typ .
250
980
70
25
40
D2PAK
62.5
0.028
0.035
1
Max.
Max.
Max.
1400
-0.3
200
500
80
50
3
o
o
Un it
Un it
Un it
Unit
C/W
C/W
pF
o
o
o
W
V
V
V
V
S
V
V
A
A
V
C
C
C
A
A
A