VNB35N07TR-E STMicroelectronics, VNB35N07TR-E Datasheet - Page 2

• Manufacturer Part Number: VNB35N07TR-E
• Description: MOSFET OMNIFET 70V 35A D2PAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET™r
• Type: Low Sider

Specifications of VNB35N07TR-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 28 mOhm
• Current - Peak Output: 35A
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Switch Type: Low Side
• Power Switch Family: VNB35N07
• Input Voltage: 18V
• Power Switch On Resistance: 35mOhm
• Output Current: 25A
• Mounting: Surface Mount
• Supply Current: 250uA
• Package Type: D2PAK
• Pin Count: 2 +Tab
• Power Dissipation: 125W
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

VNP35N07FI-VNB35N07-VNV35N07
ABSOLUTE MAXIMUM RATING
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/13
R
Symbol
R
Symb ol
Symb ol
Symb ol
V
R
t hj-ca se
g
t hj-a mb
V
V
V
V
V
T
P
CLAMP
I
C
V
DS( on)
I
fs
T
IN(th)
I
I
T
CL TH
DSS
I NCL
esd
I SS
DS
st g
D
R
to t
oss
in
c
j
( )
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Drain-source Voltage (V
Input Voltage
Drain Current
Reverse DC O utput Current
Electrostatic Discharge (C= 100 pF , R=1.5 K )
Total Dissipation at T
Operating Junction T emperature
Case Operating T emperature
Storage Temperature
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (V
Supply Current from
Input Pin
Input Threshold
Voltage
Static Drain-source On
Resistance
Forward
Transconductance
Output Capacitance
Parameter
Parameter
Parameter
in
Parameter
= 0)
c
= 25
in
I
I
I
V
V
V
V
V
V
V
V
= 0)
D
D
in
DS
DS
DS
DS
i n
i n
DS
DS
o
= 200 mA
= 2 mA
= -1 mA
C
= 5 V
= 10 V I
= V
= 13 V
= 13 V
= 13 V
= 25 V
= 0 V
case
in
= 25
Test Cond ition s
Test Cond ition s
Test Cond ition s
I
I
V
D
V
D
D
f = 1 MHz
in
V
V
in
+ Ii
I
o
= 18 A
= 18 A
Max
Max
V
D
in
in
C unless otherwise specified)
= 0
= 10 V
in
= 18 A
= 0
= 0
n
= 0
= 1 mA
ISOW ATT 220 Pow erSO -10
3.12
62.5
V
Po werSO-10
in
= 0
D2PAK
125
Internally Clamped
Internally Limited
Internally Limited
Internally Limited
-55 to 150
Min.
Min.
Min.
Value
0.8
60
55
20
2000
-1
-50
50
18
1
ISOW AT T220
Typ .
Typ .
Typ .
250
980
70
25
40
D2PAK
62.5
0.028
0.035
1
Max.
Max.
Max.
1400
-0.3
200
500
80
50
3
o
o
Un it
Un it
Un it
Unit
C/W
C/W
pF
o
o
o
W
V
V
V
V
S
V
V
A
A
V
C
C
C
A
A
A