VNQ5050AK-E STMicroelectronics, VNQ5050AK-E Datasheet - Page 21

• Manufacturer Part Number: VNQ5050AK-E
• Description: IC DRIVER HISIDE QUAD POWERSSO24
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ5050AK-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 50 mOhm
• Current - Peak Output: 19A
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSSO-24
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VNQ5050AK-E
3.1.2
3.2
3.3
Solution 2: a diode (D
A resistor (R
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
Load dump protection
D
V
that are greater than the ones shown in the ISO T/R 7637/1 table.
Microcontroller I/Os protection
If a ground protection network is used and negative transients are present on the V
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os.
-V
Calculation example:
For V
5 kΩ ≤ R
Recommended values: R
CC
ld
CCpeak
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
max DC rating. The same applies if the device is subject to transients on the V
CCpeak
/I
prot
latchup
= - 100 V and I
GND
≤ 180 kΩ.
= 1 kΩ) should be inserted in parallel to D
≤ R
prot
≤ (V
prot
latchup
OHμC
GND
= 10 kΩ, C
Doc ID 13329 Rev 9
) in the ground line.
-V
≥ 20 mA; V
IH
-V
GND
EXT
) / I
= 10 nF
OHμC
IHmax
≥ 4.5 V
.
GND
if the device drives an
Application information
prot
) in line to
CC
CC
line,
line
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