VND830LSP-E STMicroelectronics, VND830LSP-E Datasheet - Page 16

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VND830LSP-E

Manufacturer Part Number
VND830LSP-E
Description
IC DVR HIGH SIDE 2CH 18A PWRSO10
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VND830LSP-E

Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
60 mOhm
Current - Peak Output
23A
Voltage - Supply
5.5 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-

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Quantity
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Part Number:
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Application information
3
3.1
3.1.1
16/27
Application information
Figure 24. Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device’s datasheet.
Power dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
D
GND
= (-V
R
R
produces a shift (I
GND
GND
+5V
C
GND
CC
)
2
/ R
is the DC reverse ground pin current and can be found in the absolute
600 mV / I
-V
R
R
GND
R
R
CC
prot
prot
prot
prot
) / (-I
+5V
GND
S(on)max
GND
+5V
S(on)max
(when V
)
STATUS2
INPUT2
STATUS1
INPUT1
Doc ID 10882 Rev 3
* R
CC
GND
< 0: during reverse battery situations) is:
) in the input thresholds and the status output
V
GND
R
GND
GND
GND
GND
V
S(on)max
only)
CC
D
GND
resistor.
OUTPUT2
OUTPUT1
becomes the sum of the
VND830LSP-E
D
ld

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