VNP35NV04-E STMicroelectronics, VNP35NV04-E Datasheet - Page 3

• Manufacturer Part Number: VNP35NV04-E
• Description: MOSFET OMNIFETII 40V 30A TO-220
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNP35NV04-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 13 mOhm
• Current - Peak Output: 45A
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -

THERMAL DATA
(*)
ELECTRICAL CHARACTERISTICS (-40°C < T
OFF
ON
When mounted on a standard single-sided FR4 board with 50mm
Symbol
R
Symbol
Symbol
R
V
R
V
V
V
CLAMP
thj-case
thj-amb
I
DS(on)
I
CLTH
DSS
INTH
INCL
ISS
Thermal Resistance
Thermal Resistance Junction-ambient MAX
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
Zero Input Voltage Drain
Current (V
Static Drain-source On
Resistance
Parameter
Parameter
IN
=0V)
Parameter
Junction-case}}}
V
V
V
V
I
I
V
V
V
V
IN
IN
IN
IN
DS
DS
DS
DS
IN
IN
=1mA
=-1mA
=0V; I
=0V; I
=5V; I
=5V; I
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
=V
=0V; V
=13V; V
=25V; V
IN
Test Conditions
; I
D
D
D
D
=15A
=2mA
D
=15A; T
=15A; T
IN
Test Conditions
MAX
=1mA
IN
IN
=5V
j
=0V; T
=0V
< 150°C, unless otherwise specified)
2
PowerSO-10
of Cu (at least 35 m thick) connected to all DRAIN pins.
j
j
=25°C
=150°C
j
=25°C
50(*)
1
™
PowerSO-10
D2PAK
50(*)
Value
1
10
20
Min
-1.0
0.5
40
36
6
Max
TO-220
TO-220 / TO-247
50
1
Typ
100
6.8
45
D
2
13
24
PAK
TO-247
0.6
30
Max
-0.3
150
2.5
55
30
75
8
°C/W
°C/W
Unit
Unit
Unit
m
V
V
V
V
A
A
3/19
1