VND920-E STMicroelectronics, VND920-E Datasheet
VND920-E
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VND920-E Summary of contents
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... VERY LOW STAND-BY POWER DISSIPATION REVERSE BATTERY PROTECTION (**) IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE DESCRIPTION The VND920 double chip device made by using STMicroelectronics Technology, intended for driving any kind of load with one side connected to ground. Active V voltage clamp protects the device against low ...
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... VND920-E Figure 2. Block Diagram V CC CLAMP GND 1 INPUT CLAMP GND 2 INPUT 2 2/19 OVERVOLTAGE DETECTION UNDERVOLTAGE DETECTION DRIVER LOGIC OVERTEMPERATURE DETECTION OVERVOLTAGE DETECTION UNDERVOLTAGE DETECTION DRIVER LOGIC OVERTEMPERATURE DETECTION Power CLAMP CURRENT LIMITER V LIMITER DS I OUT K Power CLAMP CURRENT LIMITER V LIMITER DS I OUT ...
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... GND 1 INPUT GND 2 INPUT Current Sense N.C. X Through 1K resistor X VND920-E Value 41 - 0.3 - 200 Internally Limited - 21 +/- 10 -3 +15 4000 2000 5000 5000 355 6.25 (See note 1) Internally limited - 40 to 150 - 55 to 150 OUTPUT 1 OUTPUT 1 OUTPUT 1 OUTPUT 1 OUTPUT 1 OUTPUT 1 OUTPUT 2 OUTPUT 2 OUTPUT 2 ...
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... VND920-E Figure 3. Current and Voltage Conventions CC1 V IN1 (*) during reverse battery condition Fn CCn OUTn Table 5. Thermal Data Symbol R Thermal Resistance Junction-lead thj-lead R Thermal Resistance Junction-ambient (one chip ON) thj-amb R Thermal Resistance Junction-ambient (two chips ON) thj-amb (1) Note: When mounted on a standard single-sided FR-4 board with 1cm mounting and no artificial air flow ...
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... Test Conditions -I =5A; T =150°C OUT j Test Conditions V =13V CC 5V<V <36V CC I =2A; V =0V; L=6mH OUT IN I =1A; T =-40°C....+150°C OUT j VND920-E Min Typ Max Unit See relative V/ s diagram See relative V/ s diagram Min Typ Max Unit Min Typ Max Unit 1 ...
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... VND920-E ELECTRICAL CHARACTERISTICS (continued) Table 11. Current Sense (9V V Symbol Parameter OUT SENSE dK /K Current Sense Ratio Drift OUT SENSE dK /K Current Sense Ratio Drift OUT SENSE dK /K Current Sense Ratio Drift 3 3 Analog Sense Leakage I SENSEO Current Max Analog Sense Output ...
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... Figure 5. Switching Characteristics (Resistive load R V OUT dV /dt OUT (on) I SENSE t DSENSE INPUT t d(on) max.Tj=25...150°C min.Tj=25...150° (A) OUT =1 80% 10 90% t d(off) max.Tj=-40°C typical value min.Tj=-40° 90% dV /dt OUT (off VND920 7/19 ...
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... VND920-E Table 12. Truth Table (per each channel) CONDITIONS Normal operation Overtemperature Undervoltage Overvoltage Short circuit to GND Short circuit Negative output voltage clamp Table 13. Electrical Transient Requirements On V ISO T/R 7637/1 Test Pulse +26.5 V ISO T/R 7637/1 I Test Pulse CLASS C All functions of the device are performed as designed after exposure to disturbance. ...
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... INPUTn LOAD CURRENTn SENSEn INPUTn LOAD CURRENTn LOAD VOLTAGEn SENSEn INPUTn LOAD VOLTAGEn LOAD CURRENTn SENSEn T TSD INPUTn LOAD CURRENTn SENSEn NORMAL OPERATION UNDERVOLTAGE V USDhyst USD OVERVOLTAGE > V OVhyst CC USD SHORT TO GROUND SHORT <Nominal OVERTEMPERATURE VND920-E <Nominal V SENSEH I = SENSE R SENSE 9/19 ...
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... VND920-E Figure 7. Application Schematic +5V R prot R prot R prot C R prot R SENSE1,2 GND PROTECTION NETWORK REVERSE BATTERY Solution 1: Resistor in the ground line (R can be used with any type of load. The following is an indication on how to dimension the R resistor. GND 1) R 600mV / (I ). GND S(on)max (-I ) GND ...
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... Figure 13. Input High Level case Vih (V) 3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 100 125 150 175 Vin=3.25V -50 - 100 125 Tc (°C) Tc= 150ºC Tc= 25ºC Tc= - 40º Vcc (V) -50 - 100 125 Tc (°C) VND920-E 150 175 150 175 11/19 ...
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... VND920-E Figure 14. Input Low Level Vil (V) 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 -50 - (°C) Figure 15. Turn-on Voltage Slope dVout/dt(on) (V/ms) 700 650 Vcc=13V 600 Rl=1.3Ohm 550 500 450 400 350 300 250 -50 - (ºC) Figure 16. Overvoltage Shutdown Vov ( -50 - (°C) 12/19 Figure 17. Input Hysteresis Voltage Vhyst (V) 1 ...
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... C= Repetitive Pulse at T =125ºC Jstart Conditions: V =13. Demagnetization 0.1 1 L(mH) Values are generated with R In case of repetitive pulses, T each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. Demagnetization VND920-E 10 100 =0 L (at beginning of jstart Demagnetization t 13/19 ...
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... VND920-E SO-28 Double Island Thermal Data Figure 21. Double Island PC Board Layout condition of R and thickness=35 m, Copper areas: 0.5cm Table 14. Thermal Calculation According To The Pcb Heatsink Area Chip 1 Chip 2 ON OFF thA dchip1 OFF thC dchip2 thB dchip1 thA dchip1 R = Thermal resistance Junction to Ambient with one chip ON ...
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... C4= (W.s/°C) C5= (W.s/°C) C6= (W.s/°C) 0,5 cm ^2/is land 3 cm ^2/is land 6 cm ^2/is land One channel ON Two channels ON One c hannel ON on same chip Tw o channels ON 100 1000 = – TH THtp = Area/island (cm ) 0.5 0.02 0.1 2 0.0015 7.00E-03 1.50E-02 0.2 1.5 5 VND920 15/19 ...
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... VND920-E PACKAGE MECHANICAL Table 16. SO-28 Mechanical Data Symbol Figure 25. SO-28 Package Dimensions 16/19 millimeters Min Typ 0.10 0.35 0.23 0.50 45° (typ.) 17.7 10.00 1.27 16.51 7.40 0.40 8° (max.) Max 2.65 0.30 0.49 0.32 18.1 10.65 7.60 1.27 ...
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... Tube length (± 0. (± 0.1) All dimensions are in mm 1.5 1.5 7.5 6.5 2 End Top No components cover 500mm min tape VND920-E 28 700 532 3.5 13.8 0.6 REEL DIMENSIONS Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± -0) 16.4 ...
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... VND920-E REVISION HISTORY Date Revision Oct. 2004 1 - First Issue. 18/19 Description of Changes ...
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