E-L6204 STMicroelectronics, E-L6204 Datasheet - Page 8

• Manufacturer Part Number: E-L6204
• Description: IC DRIVER FULL BRIDGE DUAL 20DIP
• Manufacturer: STMicroelectronics
• Type: H Bridger

Specifications of E-L6204

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 1.2 Ohm
• Current - Output / Channel: 500mA
• Current - Peak Output: 3A
• Voltage - Supply: 12 V ~ 48 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: 20-DIP (0.300", 7.62mm)
• Operating Supply Voltage: 42 V
• Supply Current: 10 mA
• Mounting Style: Through Hole
• Current, Output, High Level: 3 A
• Package Type: 20-Lead Power DIP, SO20
• Power Dissipation: 2 W
• Temperature, Operating, Maximum: 150 °C
• Temperature, Operating, Minimum: -40 °C
• Voltage, Input, High Level: 7 V
• Voltage, Input, Low Level: –0.3 V
• Voltage, Supply: 50 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

L6204
APPLICATION INFORMATION
RECIRCULATION
During recirculation with the ENABLE input high, the voltage drop across the transistor is R
voltages less than 0.7 V and is clamped at a voltage depending on the characteristics of the source-drain
diode for greater voltages. Although the device is protected against cross conduction, current spikes can
appear on the current sense pin due to charge/discharge phenomena in the intrinsic source drain capac-
itances. In the application this does not cause any problems because the voltage created across the sense
resistor is usually much less than the peak value, although a small RC filter can be added if necessary.
POWER DISSIPATION (each bridge)
In order to achieve the high performance provided by the L6204 some attention must be paid to ensure
that it has an adequate PCB area to dissipate the heat. The first stage of any thermal design is to calculate
the dissipated power in the appl ication, for this example the half step operation shown in figure 7 is con-
sidered.
RISE TIME T
When an arm of the half bridge is turned on current begins to flow in the inductive load until the maximum
current I
The dissipated energy E
Figure 7.
ON TIME T
During this time the energy dissipated is due to the ON resistance of the transistors E
tation E
In the commutation the energy dissipated is :
Where :
T
T
f
8/12
SWITCH
COM
COM
= Commutation Time and it is assumed that ;
= T
COM
= Chopper frequency
L
TURN-ON
is reached after a time T
ON
. As two of the POWER DMOS transistors are ON E
r
= T
TURN-OFF
OFF/ON
= 100 ns
is in this case :
r
E
.
COM
E
OFF/ON
E
ON
= V
= I
S
= [R
· I
L
2
L
· R
DS(ON)
· T
DS(ON)
COM
· I
· f
L
SWITCH
· 2 · T
2
· T
r
] · 2/3
ON
ON
· T
is given by :
ON
ON
and the commu-
DS(ON)
. I
L
for