E-L6204D STMicroelectronics, E-L6204D Datasheet - Page 6
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E-L6204D
Manufacturer Part Number
E-L6204D
Description
IC DRVR FULL BRIDGE DUAL 28-SOIC
Manufacturer
STMicroelectronics
Type
H Bridger
Datasheet
1.E-L6204.pdf
(12 pages)
Specifications of E-L6204D
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
1.2 Ohm
Current - Output / Channel
500mA
Current - Peak Output
3A
Voltage - Supply
12 V ~ 48 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
28-SOIC (7.5mm Width)
Operating Current
10mA
Operating Temperature Classification
Automotive
Package Type
SO
Operating Supply Voltage (min)
12V
Operating Supply Voltage (typ)
42V
Operating Supply Voltage (max)
48V
Operating Supply Voltage
42 V
Supply Current
10 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
L6204
TRANSISTOR OPERATION
ON STATE
When one of the POWER DMOS transistors is ON it can be considered as a resistor R
a junction temperature of 25°C.
In this condition the dissipated power is given by :
The low R
OFF STATE
When one of the POWER DMOS transistor is OFF the VDS voltage is equal to the supply voltage and only
the leakage current IDSS flows. The power dissipation during this period is given by :
TRANSITIONS
Like all MOS power transistors the DMOS POWER transistors have as intrinsic diode between their
source and drain that can operate as a fast freewheeling diode in switched mode applications.
During recirculation with the ENABLE input high, the voltage drop across the transistor is RDS(ON) . ID
and when the voltage reaches the diode voltage it is clamped to its characteristic.
When the ENABLE input is low, the POWER MOS is OFF and the diode carries all of the recirculation
current. The power dissipated in the transitional times in the cycle depends upon the voltage and current
waveforms in the application.
BOOTSTRAP CAPACITORS
To ensure the correct driving of high side drivers a voltage higher than V
This bootstrap voltage is not needed for the lower power DMOS transistor because their sources are
grounded. To produce this voltage a charge pump method is used and mAde by two external capacitors
and two diodes. It can supply the 4 driving blocks of the high side drivers. Using an external capacitor the
turn-on speed of the high side driver is very high; furthermore with different capacitance values it is pos-
sible to adapt the device to different switching frequencies. It is also possible to operate two or more
L6204s using only 2 diodes and 2 capacitance for all the ICs; all the Vboot pins are connected to the Cs-
tore capacitance while the pin 11 (VCP) of just one L6204 is connect to C
have to be connected to the same V
Figure 3. Two Phase Chopping
6/12
IN1 = H
IN2 = L
EN1 = H
DS(ON)
of the Multipower-BCD process can provide high currents with low power dissipation.
S
. (see fig. 6)
P
P
trans
ON
P
OFF
= R
= I
= V
DS
DS(ON)
(t) × V
S
· I
DSS
· I
DS
IN1 = L
IN2 = H
EN1 = H
DS
(t)
2
pump
S
is supplied on pin 20 (V
, obviously all the L6204 ICs
DS(ON)
= 1.2
boot
at
).