NCV8450STT3G ON Semiconductor, NCV8450STT3G Datasheet - Page 8

• Manufacturer Part Number: NCV8450STT3G
• Description: IC DRIVER HIGH SIDE SOT-223-4
• Manufacturer: ON Semiconductor
• Type: High Sider

Specifications of NCV8450STT3G

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 1 Ohm
• Current - Peak Output: 800mA
• Voltage - Supply: 4.5 V ~ 45 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm
• Drain-source Breakdown Voltage: 45 V
• Continuous Drain Current: 800 mA
• Power Dissipation: 1.7 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NCV8450STT3G
ISO PULSE TEST RESULTS
0.001
1000
0.01
100
0.1
10
1E−06
1
Test Pulse
0.2
0.1
0.05
Single Pulse
0.02
Duty Cycle = 0.5
0.01
3a
3b
Psi TSP−A(t)
1
2
5
1E−05
Device
1E−04
Test Level
140
120
100
200 V
150 V
200 V
200 V
175 V
80
60
40
20
0
0
TYPICAL CHARACTERISTIC CURVES
Figure 21. Transient Thermal Response
100
1E−03
COPPER HEAT SPREADER AREA (mm
Figure 20. R
200
http://onsemi.com
PULSE TIME (s)
Test Results
1E−02
E(100 V)
300
qJA
(Pb−Free)
SOT−223
Package
C
C
C
C
8
PCB Cu thickness, 1.0 oz
PCB Cu thickness, 2.0 oz
vs. Copper Area
400
1E−01
500
Pulse Cycle Time and Generator Impedance
600
2
)
1E+00
700
500 ms, 10 W
500 ms, 10 W
100 ms, 50 W
100 ms, 50 W
400 ms, 2 W
1E+01
4000 / Tape & Reel
Shipping
1E+02
†
1E+03