IPS024G International Rectifier, IPS024G Datasheet
IPS024G
Specifications of IPS024G
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IPS024G Summary of contents
Page 1
... Active clamp Low current & logic level input E.S.D protection Description The IPS024G are fully protected quad low side SMART POWER MOSFETs respectively. They feature over- current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET ® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments ...
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... IPS024G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (T Ambient = 25 print with 70 m copper thickness. Symbol Parameter V ds Maximum drain to source voltage V in Maximum input voltage ...
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... (unless otherwise specified). j Min. Typ. Max. Units Test Conditions 0.5 0.15 1 0.9 0 0.8 3.5 1.3 0.5 2.5 3.3 — — IPS024G Min. Max. Units 35 — 0.5 A — 0.7 0 — kHz 5V 14V 40V 20mA (see Fig.3 & shutdown (see Fig.3 & ...
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... All values are typical Lead Assignments 4 Min. Typ. Max. Units Test Conditions — 165 — 1.5 2 400 — — 200 k 1000 > 165°c I > Isd Lead SOIC (Quad) IPS024G Part Number o C See fig See fig 0V 14V DRAIN sense SOURCE www.irf.com ...
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... Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com 90 % Vin > T reset Tr-in Tr- Ids Vds Figure rise time & switching time definitions T clamp Rem : V load is negative during demagnetization Figure 4 - Active clamp test circuit IPS024G Td off load + Vin IN Vds S Ids 5 ...
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... IPS024G All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 300 250 200 150 100 Figure 5 - Rds Input Voltage (V) 10 ton de lay 9 ris e tim e 8 130% rds Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds (on) (us) Vs Input Voltage (V) ...
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... Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us Resistor ( ) Isd 25°C Ilim 25° Figure 11 - Current Iim. & I shutdown (A) Vs Vin (V) www.irf.com 10000 1 0 Figure 10 - Turn-OFF Delay Time & Fall Time (us -50 -25 Figure shutdown (A) Vs Temperature ( IPS024G delay off fall tim Resistor ( ) 100 125 150 ...
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... Std. footprint 75 C mosfets - 100 Figure 13 - Max.Cont. Ids ( Amb. Temperature ( C) - IPS024G s ingle puls e 10 100 Hz r th=100°C/W dT=25° rth=100°C/W dT=25°C 1 Vbat = 14 V Tjini = T sd for single pulse all curves for 1 mosfet active 0 Figure 15 - Max. Iclamp (A) Vs Inductive Load (mH) ...
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... Junction Temperature ( C) 120% 115% 110% 105% 100% 95% 90% Vds clamp @ Isd 85% Vin clamp @ 10mA 80% -50 - 100 125 150 Figure 19 -Vin clamp and Vds clamp2 (%) www.irf.com 16 Treset 14 rise tim e fall time -50 - 100 125 150 Figure 18 - Rise Time, Fall Time and Treset ( IPS024G 9 ...
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... IPS024G Case Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 10 16 -Lead SOIC (narrow body) Data and specifications subject to change without notice. 01-6018 01-3064 00 (MS-012AC) 10/16/2002 www.irf.com ...